IXGR60N60B2 Allicdata Electronics
Allicdata Part #:

IXGR60N60B2-ND

Manufacturer Part#:

IXGR60N60B2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 250W ISOPLUS247
More Detail: IGBT PT 600V 75A 250W Through Hole ISOPLUS247™
DataSheet: IXGR60N60B2 datasheetIXGR60N60B2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 250W
Base Part Number: IXG*60N60
Supplier Device Package: ISOPLUS247™
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 50A, 3.3 Ohm, 15V
Td (on/off) @ 25°C: 28ns/160ns
Gate Charge: 170nC
Input Type: Standard
Switching Energy: 1mJ (off)
Series: HiPerFAST™
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Current - Collector Pulsed (Icm): 300A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGR60N60B2 is a single IGBT, a type of transistor. IGBT stands for Insulated Gate Bipolar Transistor and is one of the most popular transistor types due to its ability to accurately switch high current and power with low loss. It is commonly used in a variety of applications such as power conversion, motor control, high speed switching, and other demanding power applications.

Application Field of IXGR60N60B2

IXGR60N60B2 is most commonly used in motor control, high voltage DC-DC conversion, and power factor correction. This transistor can handle up to 600V DC and 60A of current, making it ideal for high voltage applications. Its 79mΩ total gate charge and 8.5µs turn-off time enable the IXGR60N60B2 to switch ultra-fast with low losses, achieving high power efficiency while allowing the device to operate at high temperatures, up to 175°C. It is perfect for applications such as air conditioners, washing machines, solar inverters, and welding machines that require a combination of reliability and high efficiency.

Working Principle of IXGR60N60B2

The working principle of the IXGR60N60B2 relies on the characteristic of an IGBT, which is designed to have a gate insulation layer between the gate and collector. This layer has a higher breakdown voltage than a traditional BJT type of transistor, which makes it suitable for handling high voltages with low power losses. When a current passes from the collector to the emitter, it causes the current to flow through the gate insulation layer, creating a junction field effect between it and the base. As a result, the current that passes through the gate will act as a control signal, allowing the user to control the device. The IXGR60N60B2 also features a negative-temperature coefficient (NTC) resistor which is used to limit the power flow in the device. The NTC resistor is designed to periodically release heat buildup as the device operates, which helps maintain a safe temperature the device can work at.

Conclusion

The IXGR60N60B2 is a single IGBT that is ideal for applications that require high voltage and current handling. It is specifically designed to handle up to 600V DC and 60A with low losses thanks to its 79mΩ total gate charge and 8.5µs turn-off time. It is commonly used in motor control, high voltage DC-DC conversion, and power factor correction. Its NTC resistor also helps maintain safe temperatures for the device and helps provide reliable and efficient operation.

The specific data is subject to PDF, and the above content is for reference

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