IXGR60N60B2D1 Allicdata Electronics
Allicdata Part #:

IXGR60N60B2D1-ND

Manufacturer Part#:

IXGR60N60B2D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 75A 250W ISOPLUS247
More Detail: IGBT PT 600V 75A 250W Through Hole ISOPLUS247™
DataSheet: IXGR60N60B2D1 datasheetIXGR60N60B2D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 1mJ (off)
Base Part Number: IXG*60N60
Supplier Device Package: ISOPLUS247™
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 35ns
Test Condition: 400V, 50A, 3.3 Ohm, 15V
Td (on/off) @ 25°C: 28ns/160ns
Gate Charge: 170nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Current - Collector Pulsed (Icm): 300A
Current - Collector (Ic) (Max): 75A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGR60N60B2D1 is a Insulated Gate Bipolar Transistor (IGBT) that is well-suited for a variety of applications. It is a high voltage, large current and low conduction losses device that comes in a small package and can be used for both high frequency and low frequency applications. Because of the unique combination of features the IXGR60N60B2D1 can be used in many different applications including; motor control, uninterruptible power supply applications, high speed switching, frequency conversion and power factor correction.

The IXGR60N60B2D1 is a Single IGBT with a voltage blocking capability of 600 volts and a current carrying capability of 60 Amps. It also has a gate drive current requirement of 3 Amps and a on-state drain current rating of 35 Amps. This IGBT has a low on-state voltage drop of 1.55 volts and an operating temperature range of -40 to 150C.

The basic working principle of the IXGR60N60B2D1 is similar to other IGBTs. It consists of two MOS transistors and a bipolar junction transistor (B-JT). The MOS transistors act as switches which are controlled through the gate which is connected to the MOSFET gates and to the B-JT emitter. The B-JT acts as a voltage-sensing device, which allows the MOSFET gates to turn ON when the gate voltage exceeds a certain threshold. When gate voltage Vge is applied, the MOSFET gate begins to open, allowing the current from the collector to the emitter of the NPN B-JT.

The IXGR60N60B2D1 uses an advanced high voltage process to increase the voltage blocking capability and the current capacity. Because of the advanced process the on-state losses are very low, the switching losses are reduced, and the IGBT has very low noise characteristics. The IXGR60N60B2D1 is designed to have a high energy efficiency and a high switching speed. It also has a higher current capacity than other IGBTs of the same size.

The IXGR60N60B2D1 can be used in a variety of applications due to its unique combination of features. It can be used in motor control, uninterruptible power supply applications, high speed switching and frequency conversion. It is also well suited for power factor correction and is often used in arc welding and cutting machines. In addition, the IXGR60N60B2D1 is used in automotive and industrial applications, where it can provide reliable operation and low conduction losses.

In conclusion, the IXGR60N60B2D1 is a high voltage, large current, low conduction losses IGBT. It can be used in many applications including motor control, UPS, high speed switching, frequency conversion and power factor correction. The IXGR60N60B2D1 is designed to have a high energy efficiency and a high switching speed. It also has a higher current capacity than other IGBTs of the same size. The IXGR60N60B2D1 is an ideal choice for a wide range of applications in the automotive and industrial markets.

The specific data is subject to PDF, and the above content is for reference

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