IXGR40N60B2 Allicdata Electronics
Allicdata Part #:

IXGR40N60B2-ND

Manufacturer Part#:

IXGR40N60B2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 60A 167W ISOPLUS247
More Detail: IGBT PT 600V 60A 167W Through Hole ISOPLUS247™
DataSheet: IXGR40N60B2 datasheetIXGR40N60B2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Power - Max: 167W
Base Part Number: IXG*40N60
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 400V, 30A, 3.3 Ohm, 15V
Td (on/off) @ 25°C: 18ns/130ns
Gate Charge: 100nC
Input Type: Standard
Switching Energy: 400µJ (off)
Series: HiPerFAST™
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGR40N60B2 is an advanced, high-performance insulated gate bipolar transistor (IGBT). It is designed as high-current, high-speed rectifier in power flow control devices and inverter supply circuits. It has been widely used in various applications due to its excellent features and performance.

The IXGR40N60B2 is a single-chip, three-terminal power switching device featuring high-speed switching, high-voltage blocking capability, and single-chip integration. It is primarily used as an on/off switch in power flow control applications, including switching circuits and inverter supply circuits.

The IXGR40N60B2 is constructed using an N-type MOSFET as the primary switching element, and two IGBTs as the secondary switching elements. The N-type MOSFET is used for high-speed switching and the two IGBTs provide high-current to enable low-loss switching. The device boasts an integrated thermal protection system (TPS) which monitors device temperature and provides protection against over-temperature and short-circuit conditions.

The IXGR40N60B2 is built on a highly reliable and durable dielectric structure which is insulated by a ceramic package. The package features dual mounting tabs which enable the device to be mounted onto a heat sink. This enables improved heat dissipation and allows higher current to be drawn.

The IXGR40N60B2 operates in either a half bridge or full bridge configuration. In the half-bridge configuration, the primary switching element is an N-type MOSFET and the two IGBTs are used for the two output paths. The full-bridge configuration requires two N-type MOSFETs and two IGBTs. The N-type MOSFETs provide the high speed switching and the IGBTs provide the high current.

The integrated TPS allows the IXGR40N60B2 to operate at higher temperatures than conventional power semiconductor devices. This allows higher current to be drawn and enables the device to be used in high-heat applications. The device also features low static losses and low RDS(on) characteristics, resulting in lower power dissipation.

The IXGR40N60B2 is an advanced power switching device that features excellent features and performance. It is capable of handling high-voltage and high-current applications, and offers a high-speed switching and integrated thermal protection system. It can be used in either half-bridge or full-bridge configurations and is ideal for use in power flow control devices and inverter supply circuits.

The specific data is subject to PDF, and the above content is for reference

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