IXGR40N120B2D1 Discrete Semiconductor Products |
|
| Allicdata Part #: | IXGR40N120B2D1-ND |
| Manufacturer Part#: |
IXGR40N120B2D1 |
| Price: | $ 9.16 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | IGBT 1200V ISOPLUS247 |
| More Detail: | IGBT 1200V Through Hole ISOPLUS247™ |
| DataSheet: |  IXGR40N120B2D1 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| 30 +: | $ 8.32167 |
Specifications
| Switching Energy: | -- |
| Base Part Number: | IXG*40N120 |
| Supplier Device Package: | ISOPLUS247™ |
| Package / Case: | ISOPLUS247™ |
| Mounting Type: | Through Hole |
| Operating Temperature: | -- |
| Test Condition: | -- |
| Td (on/off) @ 25°C: | -- |
| Input Type: | Standard |
| Series: | -- |
| Vce(on) (Max) @ Vge, Ic: | -- |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| IGBT Type: | -- |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Tube |
Description
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The IXGR40N120B2D1 is a power transistor that belongs to the IGBT (Insulated-Gate Bipolar Transistor) category, and single type. It provides 1200V of blocking voltage, and is known for having a low gate charge. This semiconductor is often seen in AC/DC converters and inverters, as it is able to provide a heavy load current with a low switching loss. It is also suitable for a wide range of general purpose switching applications.
The IXGR40N120B2D1 operating principle revolves around the Gate-Emitter Voltage (VGE). This transistor uses VGE to regulate the conduction of current between the Collector and Emitter, meaning that it does not need to be held in a constant state when current is conducted. This makes it suitable for electromagnetic compatibility (EMC) compliant designs, as its switching current can be regulated with only a small amount of power.
The primary application field of the IXGR40N120B2D1 is in AC/DC converters and inverters. Its use in such devices results in higher efficiency and reliability, thanks to its low switching losses. The transistor is also used as a switch in various appliances, as it can provide a high load current with a minimal power draw. Additionally, the IXGR40N120B2D1 is used in automotive, aerospace and defense applications.
The IXGR40N120B2D1 is an ideal solution for many applications due to its high levels of reliability and efficiency. The transistor can be switched from its cut-off state in a fraction of a second, meaning that it is able to respond to changing loads quickly. It also offers a low gate charge, which reduces the power loss of the transistor during switching. The IXGR40N120B2D1 also offers a high blocking voltage of 1200V, which makes it suitable for a wide range of applications, including those in automotive, aerospace and defense.
Overall, the IXGR40N120B2D1 is an ideal IGBT transistor for AC/DC converters and inverters, as well as a variety of other applications. Its low switching losses, low gate charge and high blocking voltage make it a reliable and efficient solution, while its fast switching capabilities give it a high level of responsiveness to changing loads.
The IXGR40N120B2D1 operating principle revolves around the Gate-Emitter Voltage (VGE). This transistor uses VGE to regulate the conduction of current between the Collector and Emitter, meaning that it does not need to be held in a constant state when current is conducted. This makes it suitable for electromagnetic compatibility (EMC) compliant designs, as its switching current can be regulated with only a small amount of power.
The primary application field of the IXGR40N120B2D1 is in AC/DC converters and inverters. Its use in such devices results in higher efficiency and reliability, thanks to its low switching losses. The transistor is also used as a switch in various appliances, as it can provide a high load current with a minimal power draw. Additionally, the IXGR40N120B2D1 is used in automotive, aerospace and defense applications.
The IXGR40N120B2D1 is an ideal solution for many applications due to its high levels of reliability and efficiency. The transistor can be switched from its cut-off state in a fraction of a second, meaning that it is able to respond to changing loads quickly. It also offers a low gate charge, which reduces the power loss of the transistor during switching. The IXGR40N120B2D1 also offers a high blocking voltage of 1200V, which makes it suitable for a wide range of applications, including those in automotive, aerospace and defense.
Overall, the IXGR40N120B2D1 is an ideal IGBT transistor for AC/DC converters and inverters, as well as a variety of other applications. Its low switching losses, low gate charge and high blocking voltage make it a reliable and efficient solution, while its fast switching capabilities give it a high level of responsiveness to changing loads.
The specific data is subject to PDF, and the above content is for reference
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