IXGR55N120A3H1 Discrete Semiconductor Products |
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Allicdata Part #: | IXGR55N120A3H1-ND |
Manufacturer Part#: |
IXGR55N120A3H1 |
Price: | $ 9.83 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 1200V 70A 200W ISOPLUS247 |
More Detail: | IGBT PT 1200V 70A 200W Through Hole ISOPLUS247™ |
DataSheet: | IXGR55N120A3H1 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
30 +: | $ 8.93361 |
Power - Max: | 200W |
Supplier Device Package: | ISOPLUS247™ |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 200ns |
Test Condition: | 960V, 55A, 3 Ohm, 15V |
Td (on/off) @ 25°C: | 23ns/365ns |
Gate Charge: | 185nC |
Input Type: | Standard |
Switching Energy: | 5.1mJ (on), 13.3mJ (off) |
Series: | GenX3™ |
Vce(on) (Max) @ Vge, Ic: | 2.35V @ 15V, 55A |
Current - Collector Pulsed (Icm): | 330A |
Current - Collector (Ic) (Max): | 70A |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
IGBT Type: | PT |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IXGR55N120A3H1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) that belongs to the Single family. It is rated for high current applications up to 55 Amps and easy to use with its optimal gate drive characteristics. This transistor is suitable for use in general purpose and cell phone applications, as well as lighting, motor control, and AC/DC converters.
Features
- Low switching losses.
- Gate-Emitter Voltage (Vge) : 15 V max.
- Collector-Emitter Voltage (VCE): 1200 V.
- High voltage switching frequency of up to 20 kHz.
- Fast reverse recovery time.
- Tight on-state current (IGN) range from 2 A up to 55 A.
Applications
Due to its exceptional performance and versatility, the IXGR55N120A3H1 is the ideal choice for applications such as:
- AC/DC inverters.
- Induction heating systems.
- High-powered motor drives.
- Light dimming systems and lighting control.
- Power supplies and UPS (Uninterruptible Power Supply).
- Solar cell energy conversion.
- Industrial robotics.
Working Principle
IGBTs combine the properties of a traditional bipolar transistor with the ones of a voltage-controlled MOS transistor. For this reason, this type of transistor can block both voltages (forward and reverse) applied from the drain and source terminals. This is useful for isolating electronic power components from the power supply.
The IXGR55N120A3H1 works by using a positive voltage on the gate terminal to turn on the transistor, thus allowing positive current to flow from the collector terminal to the emitter terminal. In order to turn off the transistor, the gate voltage has to be taken to a negative value.
The main advantages of this particular IGBT are the fast switching time and the low gate charge required to turn the device on. The fast switching time is especially beneficial in applications where quick responses are needed, like in motor control and power electronics.
Conclusion
The IXGR55N120A3H1 is a versatile high-performance IGBT which belongs to the Single family. It is suitable for a wide range of applications, from general purpose to high-powered motor drives. The main features of this transistor are the low switching losses and fast switching frequency, as well as its fast reverse recovery time and tight on-state current range.
The specific data is subject to PDF, and the above content is for reference
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