IXGR55N120A3H1 Allicdata Electronics

IXGR55N120A3H1 Discrete Semiconductor Products

Allicdata Part #:

IXGR55N120A3H1-ND

Manufacturer Part#:

IXGR55N120A3H1

Price: $ 9.83
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1200V 70A 200W ISOPLUS247
More Detail: IGBT PT 1200V 70A 200W Through Hole ISOPLUS247™
DataSheet: IXGR55N120A3H1 datasheetIXGR55N120A3H1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 8.93361
Stock 1000Can Ship Immediately
$ 9.83
Specifications
Power - Max: 200W
Supplier Device Package: ISOPLUS247™
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 200ns
Test Condition: 960V, 55A, 3 Ohm, 15V
Td (on/off) @ 25°C: 23ns/365ns
Gate Charge: 185nC
Input Type: Standard
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Series: GenX3™
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 55A
Current - Collector Pulsed (Icm): 330A
Current - Collector (Ic) (Max): 70A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGR55N120A3H1 is a high-performance IGBT (Insulated Gate Bipolar Transistor) that belongs to the Single family. It is rated for high current applications up to 55 Amps and easy to use with its optimal gate drive characteristics. This transistor is suitable for use in general purpose and cell phone applications, as well as lighting, motor control, and AC/DC converters.

Features

  • Low switching losses.
  • Gate-Emitter Voltage (Vge) : 15 V max.
  • Collector-Emitter Voltage (VCE): 1200 V.
  • High voltage switching frequency of up to 20 kHz.
  • Fast reverse recovery time.
  • Tight on-state current (IGN) range from 2 A up to 55 A.

Applications

Due to its exceptional performance and versatility, the IXGR55N120A3H1 is the ideal choice for applications such as:

  • AC/DC inverters.
  • Induction heating systems.
  • High-powered motor drives.
  • Light dimming systems and lighting control.
  • Power supplies and UPS (Uninterruptible Power Supply).
  • Solar cell energy conversion.
  • Industrial robotics.

Working Principle

IGBTs combine the properties of a traditional bipolar transistor with the ones of a voltage-controlled MOS transistor. For this reason, this type of transistor can block both voltages (forward and reverse) applied from the drain and source terminals. This is useful for isolating electronic power components from the power supply.

The IXGR55N120A3H1 works by using a positive voltage on the gate terminal to turn on the transistor, thus allowing positive current to flow from the collector terminal to the emitter terminal. In order to turn off the transistor, the gate voltage has to be taken to a negative value.

The main advantages of this particular IGBT are the fast switching time and the low gate charge required to turn the device on. The fast switching time is especially beneficial in applications where quick responses are needed, like in motor control and power electronics.

Conclusion

The IXGR55N120A3H1 is a versatile high-performance IGBT which belongs to the Single family. It is suitable for a wide range of applications, from general purpose to high-powered motor drives. The main features of this transistor are the low switching losses and fast switching frequency, as well as its fast reverse recovery time and tight on-state current range.

The specific data is subject to PDF, and the above content is for reference

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