IXGR40N60B2D1 Allicdata Electronics
Allicdata Part #:

IXGR40N60B2D1-ND

Manufacturer Part#:

IXGR40N60B2D1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 60A 167W ISOPLUS247
More Detail: IGBT PT 600V 60A 167W Through Hole ISOPLUS247™
DataSheet: IXGR40N60B2D1 datasheetIXGR40N60B2D1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 400µJ (off)
Base Part Number: IXG*40N60
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 400V, 30A, 3.3 Ohm, 15V
Td (on/off) @ 25°C: 18ns/130ns
Gate Charge: 100nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 167W
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: PT
Moisture Sensitivity Level (MSL): --
Part Status: Obsolete
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGR40N60B2D1 Application Field and Working Principle

IXGR40N60B2D1 is a single IGBT that is widely used in applications such as induction heating, welding and power supply. It is a device which combines insulated gate bipolar transistor (IGBT) with one common collector. This device provides improved switching performance, higher output power and higher system efficiency.

An IGBT is a semiconductor device made of two transistors. Its parts include a collecting gate transistor and a controlled gate transistor. A current flows through the collecting gate transistor when an external voltage is applied. The controller gate transistor works as a switch and controls the current flow. This control of the current flow is performed by the application of a voltage pulse to the controlling gate.

IGBTs are commonly used in applications that require high speed switching performance, high output power and increased system efficiency. This single IGBT has a wide range of applications such as switching, motor control, EMI filters, power conversion, high frequency inverters and chargers, many regulated power supplies and lighting controls.

The working principle of IGBT is fairly simple. It functions as a switch between the current flowing through the collector and the control circuit. IGBT works on a principle known as majority carrier device which means that it can control the current flow between two ends of the device by varying the potential between them. This can be done by sending an electrical pulse to the control element and as a result, the transistor acts as a switch by varying the amount of current that can be delivered to the output of the device. This switching action is used to control the amount of power and ultimately the output of the device.

IXGR40N60B2D1 IGBT is designed for bidirectional AC and DC Motors, Induction and Resistance heating and high power rectifiers. This device can withstand high transient and continous voltage up to 600V and it features an anti-parallel diode with optimized reverse recovery characteristics. It is suitable for high power applications and high switching frequency applications.

IXGR40N60B2D1 is a single IGBT that is widely used for applications such as induction heating, welding and power supply. It is designed to handle high output power, high efficiency and high speed switching in commercial and industrial applications. The device provides improved switching performance, higher output power and higher system efficiency due to its majority carrier device principle. It is suitable for high power applications and high switching frequency applications due to its high transient and continuous voltage rating of 600 V and its anti-parallel diode with optimized reverse recovery characteristics.

The specific data is subject to PDF, and the above content is for reference

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