IXGR40N60CD1 Discrete Semiconductor Products

Switching Energy:	850µJ (off)
Base Part Number:	IXG*40N60
Supplier Device Package:	ISOPLUS247™
Package / Case:	ISOPLUS247™
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	3.5ns
Test Condition:	480V, 40A, 4.7 Ohm, 15V
Td (on/off) @ 25°C:	25ns/100ns
Gate Charge:	116nC
Input Type:	Standard
Series:	HiPerFAST™
Power - Max:	200W
Vce(on) (Max) @ Vge, Ic:	2.7V @ 15V, 40A
Current - Collector Pulsed (Icm):	150A
Current - Collector (Ic) (Max):	75A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	PT
Moisture Sensitivity Level (MSL):	--
Part Status:	Obsolete
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

IXGR40N60CD1 is a single IGBT transistor type, manufactured by international semiconductor company Infineon Technologies. This type of transistor is a part of their iMOTION family and it is often used for voltage and power supplies applications. The IXGR40N60CD1 is available in two formats, TO-258AA and D2Pak.

Application Field

The IXGR40N60CD1 can be used in a wide variety of applications including motor drives and power supplies, as it is capable of blocking high voltages and managing large currents efficiently. It is also used in motor control, AC motor drives, UPS power supplies, converters, and solar inverters. The IXGR40N60CD1 provides low gate charge, low on-state resistance, and low dynamic losses, making it a very attractive option for these applications.

Working Principle

An IGBT is a type of transistor which combines the properties of a field effect transistor (FET) and of a bipolar junction transistor (BJT). It combines the lower on-state voltage drop of an FET and the simple gate drive of a BJT. This type of transistor is also known as a “Kinked” transistor.An IGBT allows capacitive coupling between the base and the collector, which enables the transistor to provide higher current carrying capacity than a normal BJT. The primary function of an IGBT is to turn on and off a given circuit, with few requirements of the power source and a high level of efficiency.When current is applied to the gate of an IGBT, a channel is created and allows current to flow between the emitter and collector. The channel width between the emitter and collector is controlled by the gate current, so the circuit can be controlled by varying the gate current, without affecting the current in the collector. Thus, an IGBT can be used to regulate the flow of current in a circuit.

Conclusion

The IXGR40N60CD1 is a single IGBT transistor type, available in two formats, used in a variety of applications including motor drives and power supplies. The IXGR40N60CD1 provides low gate charge, low on-state resistance and low dynamic losses, making it a very attractive option for these applications. It works on the principles of an IGBT, which is a combination of a field effect transistor (FET) and a bipolar junction transistor (BJT). The IGBT allows for capacitive coupling between the base and the collector, for higher current carrying capacity than a normal BJT. By controlling the gate current, an IGBT can be used to regulate the flow of current in a circuit.

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