IXGR35N120C

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IXGR35N120C is a type of Insulated Gate Bipolar Transistor (IGBT). It is a voltage-controlled transistor with gate-controlled switching current. IGBTs are used in many different applications such as motor control, inverters, solar cell applications, power supplies, and power conversion. The IXGR35N120C IGBT is a single-chip IGBT with a blocking voltage up to 1200V, a current rating up to 120A, and a collector-emitter voltage/saturation voltage of 4.0V/20V.

The IXGR35N120C IGBT can be used in a variety of applications such as motor control, inverters, high-power amplifiers, and solar cell applications. It is a highly integrated device and is capable of providing high levels of efficiency, a wide operating range and low losses. Additionally, its soft switching capabilities make it suitable for use in applications such as electric vehicles, microwaves, and solar cell converters.

The working principle of an IGBT is based on a bipolar transistor. The gate of the IGBT is used to control the current flow from the collector to the emitter. When the gate voltage reaches a particular level, the IGBT can switch from an "on" state to an "off" state. In the "on" state, the IGBT allows current to flow from the collector to the emitter, and in the "off" state, it blocks the flow of current. Thus, by controlling the voltage at the gate, the current carried by the IGBT can be controlled.

The IXGR35N120C IGBT has a low gate charge and low gate resistance, which helps reduce power losses and increases switching efficiency. Additionally, its low current fall time makes it suitable for applications that require fast response time. Its soft switching capabilities also allow the IGBT to be used in applications such as electric vehicles and microwaves, where fast switching is necessary. In addition, the IXGR35N120C IGBT has superior temperature and EMI performance.

The IXGR35N120C IGBT is a versatile and highly integrated IGBT which is suitable for a variety of applications. It is a voltage-controlled switching device and can be used to control both current and voltage. It is characterized by a low gate charge and low gate resistance, making it suitable for applications requiring fast switching. In addition, its soft switching capabilities make it suitable for use in electric vehicles and microwaves. Furthermore, its superior temperature and EMI performance make it a great choice for applications requiring high reliability.

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