IXGR24N60CD1 Allicdata Electronics
Allicdata Part #:

IXGR24N60CD1-ND

Manufacturer Part#:

IXGR24N60CD1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 42A 80W ISOPLUS247
More Detail: IGBT 600V 42A 80W Through Hole ISOPLUS247™
DataSheet: IXGR24N60CD1 datasheetIXGR24N60CD1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Input Type: Standard
Base Part Number: IXG*24N60
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 25ns
Test Condition: 480V, 24A, 18 Ohm, 15V
Td (on/off) @ 25°C: 15ns/75ns
Gate Charge: 55nC
Series: HiPerFAST™
Switching Energy: 240µJ (off)
Power - Max: 80W
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
Current - Collector Pulsed (Icm): 80A
Current - Collector (Ic) (Max): 42A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

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The IXGR24N60CD1 is a general-purpose 600 V Insulated Gate Bipolar Transistor (IGBT) that Geko provides. As a single IGBT, the IXGR24N60CD1 is a member of Geko\'s IGBT portfolio, acting as an ideal device for various applications in the middle to high power range through its low conduction and switching losses that allow for reliable power switching performance. In this article, we will discuss the application field and working principle of the IXGR24N60CD1.

IXGR24N60CD1 Application Field

The IXGR24N60CD1 is intended for use in a variety of applications, particularly in the field of motor control, lighting, and power supplies. Its features such as the low conduction and switching losses, along with the ability to withstand higher voltages make it an ideal device for motor control applications such as DC motor drives and AC motor drives. The IXGR24N60CD1 is also suitable for use in lighting applications that require a variety of light modes such as dimming and flicker-free dimming. Its power supply capabilities are also viable due to its built-in bootstrap functionality, which makes it an ideal choice for battery/backup systems and power supply design.

IXGR24N60CD1 Working Principle

The IXGR24N60CD1 is powered by an insulated gate bipolar transistor (IGBT) principle. IGBTs combine an insulated gate field effect transistor (FET) with a bipolar junction transistor (BJT) which helps the device to achieve low conduction and switching losses. IGBTs are considered to be a reliable choice when low voltage gate drives and high-frequency switching applications come into play. Since the IXGR24N60CD1 has an integrated bootstrap function, its switching capabilities are further enhanced by allowing the device to provide an internal high-side drive voltage.

The construction of the IXGR24N60CD1 is designed to minimize losses, resulting in low power losses for both operation and switching. This is accomplished by having an insulated layer between a very small emitter base region of the BJT and the p+ collector well of the IGBT, which helps to reduce the on-state conduction losses. Additionally, the IXGR24N60CD1 contains a high junction temperature tolerance through its robust heat dissipation design, ensuring reliable performance in various environmental conditions.

The IXGR24N60CD1 is reliable and versatile thanks to its innovative design and engineering. Its internal design minimizes conduction and switching losses while its integrated bootstrap capabilities helps to ensure reliable power supply applications. Additionally, its application field spans across motor control, lighting, and power supply requirements, making it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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