IXGR45N120

IXGR45N120 Single IGBT Application Field and Working Principle

Single Insulated Gate Bipolar Transistor (IGBT) also known as a “channel transistor” is a solid-state device that controls an electric current applied between two terminals. IVXG45N120 is an IGBT module manufactured by International Rectifier that has the capacity of 45-amp peak current and an on-state voltage of 1200 Volts. In order to understand the working principle behind this IGBT and the fields of applications for this module, it is important to break down the components and individual processes.

IGBT Structure

The design of the IGBT is modified from the structure of MOSFETs and bipolar transistors. The two switches are placed in a single module so that two controlled current paths are connected together. The gate of the IGBT is connected to the base of the bipolar transistor and works as a FET (Field Effect Transistor). It controls current transport through a MOS channel by creating a voltage-controlled piezoelectric field. The emitter of bipolar transistor is connected to a stable current source and controls the on-state current of the device by receiving a current convertor.

ON State

In the on-state, the applied voltage is larger than the threshold voltage, allowing the gate voltage to open the current path of the N-channel. Consequently, current flows between the collector and the emitter. The medium voltage at the terminal allows for medium power applications such IXGR45N120 module.

OFF State

The off-state occurs when the voltage is lower than the threshold voltage and the N-channel stays close. This intervention results in the shutdown of the conduction between the collector and the emitter. The off-state of the IXGR45N120 can be either a switched off state or a static state.

Application Fields

The IXGR45N120 module is commonly used in variable frequency drive, AC motor drives, soft starters, and medium-voltage power supply due its high-power ratings. This module can also be used in different motor control applications and high current switching applications. Also, this IGBT is often incorporated in renewable energy sources such as solar panels, photovoltaic systems, wind turbines and electric vehicles.

Conclusion

Single IGBTs, like the IXGR45N120 module, are a powerful type of switching semiconductor that has a wide range of applications. They have a unique structure that is a combination of a MOSFET and a bipolar transistor, allowing them to have special characteristics that make them useful for numerous applications. This IGBT can be used in medium voltage powers, motor control applications, and various renewable energy applications.