IXTD2N60P-1J Allicdata Electronics
Allicdata Part #:

IXTD2N60P-1J-ND

Manufacturer Part#:

IXTD2N60P-1J

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 600
More Detail: N-Channel 600V 2A (Tc) 56W (Tc) Surface Mount Die
DataSheet: IXTD2N60P-1J datasheetIXTD2N60P-1J Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V
Package / Case: Die
Supplier Device Package: Die
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 56W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 25V
Vgs (Max): ±30V
Series: PolarHV™
Vgs(th) (Max) @ Id: 5V @ 250µA
Rds On (Max) @ Id, Vgs: 5.1 Ohm @ 1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Description

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IXTD2N60P-1J is a silicon-based enhancement type N-channel MOSFET. These transistor devices are widely used in the electronics industry with their ability to switch and amplify signals. In fact, IXTD2N60P-1J transistors are widely considered among the most reliable and robust MOSFETs for use in any type of application.

The IXTD2N60P-1J features a variety of features which make them a great choice for a broad range of applications. These features include a low gate charge, low gate capacitance, high performance and reliability, low on-resistance, high peak current rating, RoHS compliance, and more. In particular, the low gate charge ensures increased switching performance and reduced power consumption.

The IXTD2N60P-1J transistor is capable of operating at incredibly high speeds and can handle very large currents thanks to its design. This makes the IXTD2N60P-1J transistors very suitable for applications that require high-speed switching, such as motor drives, power controllers, switching applications, and more. In addition, the IXTD2N60P-1J can also be used in precision analog applications due to its stable operating characteristics.

The working principle of the IXTD2N60P-1J transistor is based on the effects of electric fields from the gate, drain, and source terminals. When the gate terminal receives a positive charge, it attracts electrons from the source. This creates an electric field between the drain and source, which is known as the \'channel\' mode. In this mode, the current flows from the source to the drain and the drain-source voltage governs the current flow.

When the voltage at the gate is low, the electric field between the source and drain is reduced, which turns off the device. This is known as the \'off\' state. Conversely, the electric field increases when the gate voltage rises, and this turns on the transistor. This is known as the \'on\' state. Thus, by varying the voltage at the gate, the transistor can be switched between on and off states.

The IXTD2N60P-1J transistors are also highly reliable and long-lasting due to their solid state design. This makes them ideal for use in any type of application. As such, The IXTD2N60P-1J transistors are widely used in the fields of telecommunications, consumer electronics, power supplies, automotive, and medical.

In summary, the IXTD2N60P-1J transistors are highly reliable MOSFETs that feature a wide variety of features. These features make them suitable for use in a wide variety of applications. The IXTD2N60P-1J transistors are also capable of operating at very high speeds and can handle large currents. In addition, they are highly reliable and long-lasting due to their solid state design. As such, the IXTD2N60P-1J transistors are widely used in the fields of telecommunications, consumer electronics, power supplies, automotive, and medical.

The specific data is subject to PDF, and the above content is for reference

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