IXTD4N80P-3J

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTD4N80P-3J is a power metal-oxide-semiconductor field-effect transistor (MOSFET). The IXTD4N80P-3J is a single MOSFET in an isolated dual-in-line package designed for switch mode power applications, offering improved performance and low on-resistance characteristics.

The IXTD4N80P-3J MOSFET is a three terminal device typically used to switch high-current loads and can be used in applications from low-voltage fixed and variable amplitude audio to variable frequency and pulse width modulation (PWM) switching. This device is ideal for high power, switchmode power applications, offering improved performance in areas such as reduced on-resistance, improved capacitance characteristics, higher switching speeds and low thermal resistance, resulting in great efficiency and minimum power dissipation.

MOSFETs come in a variety of configurations and types, all offering different characteristics. In terms of voltage and conducting capabilities, the IXTD4N80P-3J is a depletion mode, N-channel MOSFET, operating on voltages of 30V to 200V, providing 500mA of continuous current (I_{DS}) and 3.5 A of pulsed drain-source current (I_{D(pulse)}). The IXTD4N80P-3J has a total gate charge of 6 nC, a total capacitance of 18 pf, an input capacitance of 35 pf, and an on-resistance of 4.8 Ω. It has an absolute maximum rating of 180V on the drain-source voltage, 12A on the drain-source current, and a junction temperature of=175°C.

The working principle of a MOSFET is quite simple. The MOSFET has a source, a drain and a gate terminal. When a voltage is applied between the source and the gate, charge carriers (electrons or holes) form a conductive path between the source and the drain, allowing current to flow. This is known as “ enhancement-type” operation. When the gate voltage is below the threshold voltage, no current flows. This is known as “depletion-type” operation.

The IXTD4N80P-3J also has a gate-to-drain diode that provides a reverse current blocking capacity in case of an overvoltage or any fault condition. It also has a built-in electrostatic discharge (ESD) protection circuit that helps protect the device from ESD strikes up to 2kV.

In summary, the IXTD4N80P-3J is a single MOSFET in an isolated dual-in-line package designed for switch mode power applications. It offers improved performance, low on-resistance characteristics, and ESD protection. It operates on voltages of 30V to 200V, providing 500mA of continuous current and 3.5A of pulsed drain-source current. The IXTD4N80P-3J is ideal for high power, switch mode power applications, and is a great choice for applications ranging from audio to PWM switching.

The specific data is subject to PDF, and the above content is for reference