
Allicdata Part #: | IXTD5N100A-ND |
Manufacturer Part#: |
IXTD5N100A |
Price: | $ 11.40 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 5A DIE |
More Detail: | N-Channel 1000V 5A (Tc) Surface Mount Die |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 10.36350 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 1000V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
FET Feature: | -- |
Power Dissipation (Max): | -- |
Operating Temperature: | -- |
Mounting Type: | Surface Mount |
Supplier Device Package: | Die |
Package / Case: | Die |
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The IXTD5N100A is a member of IXYS\'s low gate charge, low gate resistance MOSFETs. It is designed to minimize conduction and switching losses, while providing fast switching speeds. This device is optimized for high current, low voltage applications, and is best utilized in a wide range of applications such as automotive, consumer electronics, motor control and power conversion applications. It also offers superior scalability and high thermal performance, making it suitable for use in applications with stringent power requirements.
The IXTD5N100A is a single-chip solution for many applications. It is a N-Channel enhancement-mode MOSFET designed for high-current applications. This device features an integrated transfer-gate driving and control circuit, allowing it to be used in many types of applications. This integrated circuit also supports a wide range of operating frequencies and comes in several packages. The device has a drain-source voltage rating of 100V, a drain-source current of 85A, and a drain-source on-state resistance of only 0.082 ohm. Additionally, the device can operate at temperatures ranging from -55 degrees Celsius to 175 degrees Celsius.
The working principle of the IXTD5N100A is relatively simple. In its “off” state, the low voltage input is sent to the gate and no current flows through the device. When the voltage input at the gate is increased, the turn-on threshold is reached and current flows from the source through the device and to the drain. The drain voltage controls the voltage across the device and the current throughout the device. The device is an enhancement-mode device, which means the gate voltage must be greater than the drain-source voltage, in order for the device to be on. With higher gate voltage, the current will increase. The device can be transiting from on-state to off-state at very low speeds or transitioning from off-state to on-state at much higher speeds.
The IXTD5N100A can be Applied in a wide range of applications, including switching power supplies, laptop power supplies, automotive applications, and motor control. In automotive applications, this device can provide fast switching for applications such as DC/DC converters, LED lighting, power inverters, motor control, and other applications requiring fast switching. This device can also be used in laptop power supplies and power inverters, as the high switching frequency can greatly reduce energy losses. The low drain-source on-state resistance minimizes conduction losses, making it a great choice for applications with limited power. Additionally, the low gate charge and low gate resistance make it well suited for use as a high-side switch in motor control applications.
In conclusion, the IXTD5N100A is an ideal choice for applications where fast switching speeds, low gate charge and resistance, and high current capacity are needed. This device can be used in a wide variety of applications, including automotive, consumer electronics, motor control, and power conversion. Its integrated transfer-gate driving and control circuit and its operating temperature range make it great for use in applications with stringent power requirements.
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