IXTD3N60P-2J

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXTD3N60P-2J is a 650V/4A N-Channel Power MOSFET produced by IXYS Corporation. This MOSFET has a low on-resistance, making it well-suited for use in switching applications where high efficiency is desired. Its low gate charge and threshold voltage make it ideal for high-speed switching applications.

The IXTD3N60P-2J\'s application field is wide and varied. It can be used in a variety of areas such as consumer electronics, automotive, telecommunications, industrial, and renewable energy applications. In consumer electronics, it is used as a switch in battery chargers and other power supplies. In automotive applications, its low RDS(on) and low gate charge enable higher efficiency power converters and inverters for electric vehicles. In telecommunications, it is used for high speed switching and in industrial applications it is used for motor control, factory automation and high reliable power supplies.

The working principle of the IXTD3N60P-2J is based on the MOSFET (metal-oxide-semiconductor field-effect transistor) technology. The MOSFET is a voltage-controlled transistor that is used for switching and amplifying electronic signals. It is composed of three distinct terminals called the source, drain and gate. The electrons move through the device in response to signals applied to the gate terminal. The IXTD3N60P-2J is an enhancement mode MOSFET which means that the channel is not present even when the gate terminal is not biased with any voltage.

In operation, a low voltage applied to the gate terminal creates an electric field that attracts electrons. This electric field increases until the electrons break through the oxide layer and form a conducting channel between the source and drain terminals. This channel allows the electrical current to flow between the source and drain terminals. Changing the voltage on the gate terminal controls the current flow, allowing the IXTD3N60P-2J to serve as an electronic switch.

The IXTD3N60P-2J is rated for 650V/4A and is constructed using a unique form of trench MOSFET technology. This technology allows for a low on-resistance. This transistor is also RoHS, REC and REACH compliant making it suitable for a variety of applications. This versatile power MOSFET is easy to use and provides an efficient and reliable way to switch and control power.

The specific data is subject to PDF, and the above content is for reference