Allicdata Part #: | 1086-15131-ND |
Manufacturer Part#: |
JANS1N4461 |
Price: | $ 100.77 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 6.8V 1.5W DO204AL |
More Detail: | Zener Diode 6.8V 1.5W ±5% Through Hole DO-204AL (D... |
DataSheet: | JANS1N4461 Datasheet/PDF |
Quantity: | 491 |
1 +: | $ 91.61460 |
10 +: | $ 85.62820 |
25 +: | $ 82.63430 |
Series: | Military, MIL-PRF-19500/406 |
Packaging: | Bulk |
Part Status: | Discontinued at Digi-Key |
Voltage - Zener (Nom) (Vz): | 6.8V |
Tolerance: | ±5% |
Power - Max: | 1.5W |
Impedance (Max) (Zzt): | 2.5 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 4.08V |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Through Hole |
Package / Case: | DO-204AL, DO-41, Axial |
Supplier Device Package: | DO-204AL (DO-41) |
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The JANS1N4461 is a commonly used Zener diode that belongs to the single diodes category. Its structure is simple and consists of just one PN junction between two electrodes. It is constructed of silicon material and designed to allow current flow in one direction, while blocking current in the reverse (opposite) direction. This diode is usually used to provide protection in power supplies, circuit boards, and relays and to reduce interference caused by voltage spikes.
Application Field
The JANS1N4461 diode is a popular choice for power supply applications. It is used for voltage regulation and to provide a stable working voltage for devices such as computers and home appliances. Additionally, its reverse breakdown voltage makes it a good choice for minimizing interference from high energy transients such as lightning strikes, high voltage spikes and nearby electronics. Because it has a low forward voltage drop and only minimal leakage, it has excellent energy efficiency when used as a rectifying diode.
Working Principle
The JANS1N4461 diode works based on the PN junction principle. When a current is passed through the diode, the mobile electrons on the P side are pulled towards the N side, while the immobile ions on the N side are pushed towards the P side. This creates a depletion layer between the two sides. If the voltage across the diode is lower than the PN junction barrier potential, then this depletion layer will prevent the current from passing through.
When the voltage across the diode is higher than the barrier potential, enough charge will move through the PN junction and the current will flow through the diode. Additionally, the JANS1N4461 diode has a reverse breakdown voltage that allows it to regulate the amount of current flowing from one side to the other. As the voltage across the diode increases, the diode\'s resistance decreases, eventually leading to reverse breakdown.
The JANS1N4461 is a simple and efficient diode that is used for a few different purposes, including power supply protection, semiconductor devices, circuit protection, and voltage regulation. Its simple design and low energy consumption make it an attractive choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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