JANSR2N7269U Allicdata Electronics
Allicdata Part #:

JANSR2N7269U-ND

Manufacturer Part#:

JANSR2N7269U

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: N CHANNEL MOSFET SMD-1
More Detail: N-Channel 200V 26A (Tc) 150W (Tc) Surface Mount U1...
DataSheet: JANSR2N7269U datasheetJANSR2N7269U Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 1mA
Package / Case: 3-SMD, No Lead
Supplier Device Package: U1 (SMD-1)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 12V
Series: Military, MIL-PRF-19500/603
Rds On (Max) @ Id, Vgs: 110 mOhm @ 26A, 12V
Drive Voltage (Max Rds On, Min Rds On): 12V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The Jansr2n7269u is a single N-channel Mosfet (metal-oxide-semiconductor field-effect transistor) designed to amplify, switch, or drive a variety of sensing and controlling units. To get the most out of the device, understanding its application fields and working principle is key.

The Jansr2n7269u is a versatile transistor. It is primarily designed for medium-to-high-power applications in load-driving circuits and is commonly used in medium-to-high-speed switching applications such as logic level conversion, motor control, lamp driving, and power supply circuits. In logic level conversion applications, it can replace higher power BJTs (Bipolar Junction Transistors) for higher efficiency in lower voltage ranges.

The Jansr2n7269u is available in two different packages, the xTdfn6 and the eZ-24. The xTdfn6 package is a small, low-profile, 6-pin device that is ideal for space and power-saving applications. The eZ-24 package provides improved reliability and higher levels of performance due to increased current carrying capability in a 24-pin package.

The Jansr2n7269u works by controlling the amount of current passing through an electrical circuit. This is done by utilizing the presence of an applied electric field. When an electric field is applied to the gate terminal, it modifies the conductivity of the Mosfet channel, thus allowing current to flow through the device. When the field is removed, the gate acts as an open switch, preventing any current from passing. In essence, the resulting transistor behaves like a switch, allowing an easy control of the current throughout the circuit.

The Jansr2n7269u is a robust device. It has low on-resistance, low input capacitance, and excellent switching performance. It also has high breakdown and blocking voltage ratings, which make it ideal for high-performance applications. Additionally, it features fast switching speed, lower gate charge, and low thermal impedance.

The Jansr2n7269u is a versatile power device. With its features, it can be used in a wide range of applications, from logic level conversion to motor control and power supply circuits. Its low-profile xTdfn6 package, high blocking voltage rating, and excellent switching performance make it ideal for space-saving and power-efficient applications. Understanding how it works and where it is best applied allows an engineer to use the Jansr2n7269u to best advantage.

The specific data is subject to PDF, and the above content is for reference

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