Allicdata Part #: | JANSR2N7389-ND |
Manufacturer Part#: |
JANSR2N7389 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | P CHANNEL MOSFET TO-39 |
More Detail: | P-Channel 100V 6.5A (Tc) 25W (Tc) Through Hole TO-... |
DataSheet: | JANSR2N7389 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-205AF Metal Can |
Supplier Device Package: | TO-205AF (TO-39) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 12V |
Series: | Military, MIL-PRF-19500/630 |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 6.5A, 12V |
Drive Voltage (Max Rds On, Min Rds On): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 6.5A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JANSR2N7389 is an N-channel enhancement mode MOSFET that is built with advanced silicon gate technology. This transistor can be used in various applications, with its small size making it ideal for applications requiring miniaturization.
The JANSR2N7389 is a standard N-channel enhancement mode field effect transistor, where the N-channel refers to the transistor being based on a n-type semiconductor material. This type of transistor is usually used as a power switch, amplifier or signal switching device, and can also be used in combination with other components to create integrated circuits such as digital logic circuits.
The JANSR2N7389 has a three-terminal structure, where the three pins are the gate, drain and source. The gate terminal is where a control signal is applied to control the transistor’s output current. The drain and source terminals control the output current’s direction and magnitude, respectively. The gate terminal is located between the drain and source terminals, and is an insulated gate electrode. When an external signal is applied to the gate terminal, the transistor can be turned on and off, and can act like an electronic switch.
The JANSR2N7389 is an enhancement mode MOSFET, meaning that it is activated by increasing the voltage at the gate terminal. This is called the ‘gate voltage’. When the gate voltage is increased, the transistor is said to be ‘on’, and current can flow from the source to the drain. When the gate voltage is reduced, the transistor is ‘off’, and the current flow stops. This type of transistor is commonly used in applications such as audio amplifiers, switching circuits and power control circuits.
One characteristic of the JANSR2N7389 is its high input impedance, which enables it to be used in applications where the input signal needs to be isolated from the power supplies. This makes it ideal for applications such as power supply regulation, as the input signal can be kept separate from the power supply, preventing interference between the two. Similarly, the high input impedance makes it ideal for use in analog signal conditioning, as it can provide an isolation between the signal and the power supply, preventing a high level of power loading.
The JANSR2N7389 can also be used in switch mode power supply applications, as it is capable of switching power very quickly. This results in improved power efficiency and increased performance. It is also capable of withstanding high temperatures and high currents, making it suitable for power control applications. Additionally, the fact that it is an N-channel device makes it ideal for use in synchronous rectification applications, where high switching speeds are required.
In conclusion, the JANSR2N7389 is a standard N-channel enhancement mode field effect transistor with a three-terminal structure. Its high input impedance makes it suitable for use in applications where the input signal needs to be isolated from the power supplies. It is also capable of switching power quickly, making it ideal for use in switch mode power supply applications. Additionally, its high temperature and current handling capabilities make it suitable for use in power control applications such as synchronous rectification.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
JANS1N6125A | Microsemi Co... | 82.94 $ | 1000 | TVS DIODE 47.1V 85.3V AXI... |
JANS1N6116US | Microsemi Co... | 97.58 $ | 1000 | HI REL TVS |
JANS1N6172AUS | Microsemi Co... | 109.21 $ | 1000 | TVS DIODE 136.8V 245.7V S... |
JANS1N6142AUS | Microsemi Co... | 125.47 $ | 1000 | TVS DIODE 7.6V 14.5V C SQ... |
JANS1N4100-1 | Microsemi Co... | 53.61 $ | 500 | DIODE ZENER 7.5V 500MW DO... |
JANS1N4120-1 | Microsemi Co... | 53.61 $ | 498 | DIODE ZENER 30V 500MW DO3... |
JANS1N4125UR-1 | Microsemi Co... | 66.46 $ | 500 | DIODE ZENER 47V 500MW DO2... |
JANS1N4614-1 | Microsemi Co... | 93.56 $ | 482 | DIODE ZENER 1.8V 500MW DO... |
JANS1N4462 | Microsemi Co... | 100.77 $ | 500 | DIODE ZENER 7.5V 1.5W DO2... |
JANS1N4476 | Microsemi Co... | 100.77 $ | 500 | DIODE ZENER 30V 1.5W DO20... |
JANS1N4461 | Microsemi Co... | 100.77 $ | 491 | DIODE ZENER 6.8V 1.5W DO2... |
JANS1N6324 | Microsemi Co... | 109.54 $ | 480 | DIODE ZENER 10V 500MW DO3... |
JANS1N4468US | Microsemi Co... | 116.33 $ | 500 | DIODE ZENER 13V 1.5W D5AZ... |
JANS1N6328US | Microsemi Co... | 122.12 $ | 256 | DIODE ZENER 15V 500MW B-S... |
JANS1N4568A-1 | Microsemi Co... | 152.43 $ | 480 | DIODE ZENER 6.4V 500MW DO... |
JANS1N6320US | Microsemi Co... | 155.52 $ | 109 | DIODE ZENER 6.8V 500MW B-... |
JANS1N4569A-1 | Microsemi Co... | 252.45 $ | 488 | DIODE ZENER 6.4V 500MW DO... |
JANS1N4109UR-1 | Microsemi Co... | 66.46 $ | 19 | DIODE ZENER 15V 500MW DO2... |
JANS1N4618UR-1 | Microsemi Co... | 93.6 $ | 15 | DIODE ZENER 2.7V 500MW DO... |
JANS1N4467 | Microsemi Co... | 100.77 $ | 6 | DIODE ZENER 12V 1.5W DO20... |
JANS1N4471US | Microsemi Co... | 116.33 $ | 3 | DIODE ZENER 18V 1.5W D5AZ... |
JANS1N6326US | Microsemi Co... | 122.12 $ | 22 | DIODE ZENER 12V 500MW B-S... |
JANS1N4962US | Microsemi Co... | 122.21 $ | 25 | DIODE ZENER 15V 5W D5BZen... |
JANS1N4971US | Microsemi Co... | 122.21 $ | 6 | DIODE ZENER 36V 5W D5BZen... |
JANS1N4972US | Microsemi Co... | 122.21 $ | 3 | DIODE ZENER 39V 5W D5BZen... |
JANS1N4960US | Microsemi Co... | 122.21 $ | 2 | DIODE ZENER 12V 5W D5BZen... |
JANS1N6320 | Microsemi Co... | 231.12 $ | 10 | DIODE ZENER 6.8V 500MW DO... |
JANS1N4996US | Microsemi Co... | 268.98 $ | 10 | DIODE ZENER 22V 5W D5BZen... |
JANS1N6318US | Microsemi Co... | 268.98 $ | 7 | DIODE ZENER 5.6V 500MW B-... |
JANSF2N7383 | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL MOSFET TO-257 |
JANSR2N7261U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET LCC-18N-... |
JANSR2N7262U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET LCC-18N-... |
JANSR2N7268U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET SMD-1N-C... |
JANSR2N7269 | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET TO-254N-... |
JANSR2N7269U | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET SMD-1N-C... |
JANSR2N7380 | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET TO-257 R... |
JANSR2N7381 | Microsemi Co... | 0.0 $ | 1000 | N CHANNEL MOSFET TO-257 R... |
JANSR2N7389 | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL MOSFET TO-39P-C... |
JANSR2N7389U | Microsemi Co... | 0.0 $ | 1000 | P CHANNEL MOSFET LCC-18P-... |
JANS2N3499L/TR | Microsemi Co... | 0.0 $ | 1000 | SMALL-SIGNAL BJTBipolar (... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...
MOSFET N-CH 55V 440A TO-268N-Channel 55V...
MOSFET N-CH 800V 14A TO-247N-Channel 800...
MOSFET N-CH 600V 23A TO-268(D3)N-Channel...
MOSFET N-CH 200V 72A TO-268N-Channel 200...
MOSFET N-CH 800V 9A TO-268N-Channel 800V...