Allicdata Part #: | 1086-15271-ND |
Manufacturer Part#: |
JANS1N6326US |
Price: | $ 122.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ZENER 12V 500MW B-SQ MELF |
More Detail: | Zener Diode 12V 500mW ±5% Surface Mount B, SQ-MELF |
DataSheet: | JANS1N6326US Datasheet/PDF |
Quantity: | 22 |
1 +: | $ 111.01900 |
10 +: | $ 105.66000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 12V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 7 Ohms |
Current - Reverse Leakage @ Vr: | 1µA @ 9V |
Voltage - Forward (Vf) (Max) @ If: | 1.4V @ 1A |
Operating Temperature: | -65°C ~ 175°C |
Mounting Type: | Surface Mount |
Package / Case: | SQ-MELF, B |
Supplier Device Package: | B, SQ-MELF |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JANS1N6326US diode is a silicon planar zener diode, packaged in the industry-standard and very popular SOD-123 package. It is a single-dimensional diode that has a wide variety of applications and working principles.
The JANS1N6326US has a variety of applications, including voltage regulation, switching and clipping circuits, peak detectors, free-wheeling diodes, and thermistors. The diode is capable of dissipating up to 500 mW of power, making it suitable for use in a wide range of electronic circuits. Furthermore, its maximum operating temperature of 150°C ensures it can withstand the higher temperatures necessary for more complex applications.
The JANS1N6326US diode is a zener diode, meaning it operates on the principle of controlled breakdown. The breakdown voltage of the diode is determined by the built-in Zener voltage, which can range from 5.0V to 12.0V depending on the specific model. As the voltage across the diode increases, it eventually reaches the breakdown voltage, causing the diode to enter the breakdown region. In this region, the device acts as a conductor and allows current to flow through it.
The JANS1N6326US diode is also capable of withstanding reverse voltages up to the zener breakdown voltage. This helps to protect the diode from damage in the event of a reverse voltage being applied. Furthermore, the diode\'s junction capacitance ensures that the device is able to handle high-frequency signals without distortion.
Overall, the JANS1N6326US diode is a single-dimensional, silicon planar zener diode, capable of withstanding a wide range of voltages and temperatures. It is mainly used for voltage regulation, switching and clipping circuits, peak detectors, free-wheeling diodes, and thermistors, and is capable of dissipating up to 500 mW of power. Its breakdown voltage is determined by the built-in Zener voltage, and it is capable of withstanding reverse voltages up to the specified Zener breakdown voltage. Its junction capacitance also ensures that the device is able to handle high-frequency signals without distortion.
The specific data is subject to PDF, and the above content is for reference
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