JANSR2N7268U

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

JANSR2N7268U application field and working principle

JANSR2N7268U (sometimes referred to as a MESFET, or Metal Semiconductor Field-Effect Transistor) is a type of semiconductor device consisting of a channel made of semiconductor material, and two control gates. The JANSR2N7268U has a maximum available current of 500mA and a max voltage drop of 2.8V. It has a low channel on-state resistance and a high transconductance (the ratio of the change in output current to the change in input voltage). This makes the JANSR2N7268U an ideal component for applications where power efficiency and low power dissipation is all important.

JANSR2N7268U may be used in many applications including power regulation, analog signal applications, and digital signal processing. In power regulation, the JANSR2N7268U is used to control the Gate to Source voltage, or the Gate to Drain voltage (Vgs and Vgd). This allows precise control over the current or voltage levels in the circuit. In analog applications, the JANSR2N7268U is used to amplify an analog signal, without the detriment of additional noise. The JANSR2N7268U also has the ability to bring voltage levels in a circuit up to higher levels, allowing for more precise control over the signal.

The working principle of the JANSR2N7268U is based on the principle of field-effect transistor (FET) design. In this design, the transistor consists of an n-type semiconductor material in which a conducting channel is formed by applying a negative voltage at the gate while certain positive voltage is applied at the source and drain ends. When this negative voltage is applied, electrons are attracted to the gate, forming an insulating layer or depletion field between the source and the gate. This layer acts like an insulator, preventing electrons from passing in and out of the gate area.

When a positive voltage is applied between the source and the drain (Vsd), it overcomes the negative voltage and electrons begin to flow through the channel. The amount of current flowing is controlled by the voltage applied between the source and the gate (Vgs) and the resistance of the channel. The low resistance of the JANSR2N7268U increases the transconductance, resulting in higher output for any small change in the input voltage.

In conclusion, JANSR2N7268U is a type of field effect transistor used for a variety of applications including power regulation, analog signal applications, and digital signal processing. Its low on-state resistance and high transconductance make it a suitable choice for applications requiring power efficiency and low power dissipation. The working principle of the JANSR2N7268U is based on the field-effect transistor design, in which an insulating layer is created by applying a negative voltage at the gate while positive voltage is applied at the source and drain ends.

The specific data is subject to PDF, and the above content is for reference