Allicdata Part #: | JANSR2N7269-ND |
Manufacturer Part#: |
JANSR2N7269 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | N CHANNEL MOSFET TO-254 |
More Detail: | N-Channel 200V 26A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | JANSR2N7269 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
Supplier Device Package: | TO-254AA |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 170nC @ 12V |
Series: | Military, MIL-PRF-19500/603 |
Rds On (Max) @ Id, Vgs: | 110 mOhm @ 26A, 12V |
Drive Voltage (Max Rds On, Min Rds On): | 12V |
Current - Continuous Drain (Id) @ 25°C: | 26A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
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The JANSR2N7269 is a three-terminal device that belongs to the category of Silicon Junction Field Effect Transistors (JFETs). It is fabricated using high-voltage Silicon gate technology, and its operating temperature range is from -65°C to +150°C. This transistors offers medium input impedance, high output impedance and low noise figure for applications that require high levels of signal integrity.
Application Field of JANSR2N7269
The JANSR2N7269 transistor is commonly used in linear applications that require high input resistance, high output impedance and low noise figures. It can be used in amplifiers, sound systems, receivers, and amplifiers of audio and video signals. In addition, the JANSR2N7269 can be used as a variable resistor in controlling the voltage of circuits and as an oscillator in applications ranging from low-frequency noise canceling to high-frequency ultrasound.
Working Principle of JANSR2N7269
The JANSR2N7269 is a three-terminal device with two resistive elements embedded in the integrated circuit. When a voltage is applied to a gate, the two resistive elements create a potential barrier at the junction, controlling the depth of the depletion region. As a result, the flow of current between the source and drain is reduced. Therefore, by utilizing the potential barrier created by the JANSR2N7269, dynamic resistance is varied accordingly to the magnitude of the applied gate voltage.
In addition, when the applied gate voltage is positive, the size of the depletion region is reduced, allowing more current to flow between the source and drain, and vice versa when the gate voltage is negative. As a result, the JANSR2N7269 can be used as a control device to modulate the flow of current between the source and drain in accordance to the magnitude of the gate voltage.
In conclusion, the JANSR2N7269 is a three-terminal device that utilizes dynamic resistance control to modulate the flow of current between the source and drain. It is commonly used in linear applications, such as amplifiers and sound systems, for its features of high input impedance, high output impedance, and low noise figures.
The specific data is subject to PDF, and the above content is for reference
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