JANSD2N2907A

Series:	Military, MIL-PRF-19500/291
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	600mA
Voltage - Collector Emitter Breakdown (Max):	60V
Vce Saturation (Max) @ Ib, Ic:	1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max):	50nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 150mA, 10V
Power - Max:	500mW
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-206AA, TO-18-3 Metal Can
Supplier Device Package:	TO-18

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Introduction

The JANSD2N2907A is a bipolar junction transistor, or BJT. It is a type of single transistor, meaning that its configurations consist of three elements connected between two terminals. The JANSD2N2907A is most often used for low frequency amplifiers and low voltage switching applications. It is a common type of transistor used for a variety of electronic applications and has versatile uses for a range of devices.

Structure and Composition

The JANSD2N2907A is mainly composed of the three main elements of the bipolar transistor: a base, a collector and an emitter. It is often described as a PNP bipolar junction transistor, or P-type BJT, because its two main electrodes are connected to two surface regions of opposite type.The base of the JANSD2N2907A is an n-type semiconductor region, while the collector and emitter are p-type semiconductor regions. The collector and emitter electrodes are connected to the p-type layers, while the base electrode is connected to the n-type layer. Its three terminal design allows for current to flow between the base and emitter, and between the collector and emitter.

Characteristics and Specifications

The JANSD2N2907A is rated to handle up to 1 Watt of power, has a maximum collector current of 400 mA, and a maximum collector-base voltage of 50 Volts. It also has a maximum base current of 200 mA and a maximum collector-emitter voltage of 25 Volts. It has a recommended operating temperature range of -55 to +150 °C.The JANSD2N2907A’s maximum operating frequency is 200 MHz. Its high frequency performance is good, but the maximum frequency range for power gain is more limited, although it still remains sufficient for most low-frequency applications.

Operating Principle

The JANSD2N2907A operates on the principle of injection of charge carriers between the collector-emitter junction and the base-emitter junction. When a base current is applied, it injects a small amount of current into the base region, which creates a depletion layer surrounding the emitter region. This depletion layer acts as a barrier, which prevents the current carriers injected by the base from entering the emitter region.The applied base current is responsible for controlling the current flow in the JANSD2N2907A and regulating its current gain. If the base current is increased, the injected carriers are able to access the emitter region, thus increasing the collector current.

Application and Advantages

Due to its versatile design, the JANSD2N2907A can be used for a wide range of applications in electronic circuits. It is commonly used for low-frequency amplifiers, low-voltage switching, audio amplifiers, oscillators, drivers, antennas, and other types of applications.The benefits of using the JANSD2N2907A over other types of bipolar transistors include its low power consumption, its high frequency performance, its low voltage switching capabilities, its high current gain, and its wide operating temperature range. These advantages make the JANSD2N2907A a highly sought-after component for modern electronic devices.

Conclusion

The JANSD2N2907A is an important component of modern electronics, used in a variety of devices and applications. Its three terminal design and versatile characteristics make it an ideal choice for low-frequency amplifiers and low-voltage switching applications. Its high frequency performance, low power consumption, current gain, and wide operating temperatures are some of the advantages that make the JANSD2N2907A an essential component of electronic circuits.

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