JANS2N5667

Series:	Military, MIL-PRF-19500/455
Packaging:	Bulk
Part Status:	Discontinued at Digi-Key
Transistor Type:	NPN
Current - Collector (Ic) (Max):	5A
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	1V @ 1A, 5A
Current - Collector Cutoff (Max):	200nA
DC Current Gain (hFE) (Min) @ Ic, Vce:	25 @ 1A, 5V
Power - Max:	1.2W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-205AA, TO-5-3 Metal Can
Supplier Device Package:	TO-5

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Introduction

The JANS2N5667 is a Single Bipolar Junction Transistor (BJT) device for general-purpose applications. It is a NPN transistor with a maximum collector power dissipation of 25W. This device is widely utilized in various electronic applications, and thanks to its relatively low cost and robust construction, it is found in a wide variety of circuits.

Structure

The structure of the JANS2N5667 is similar to the majority of BJT transistors. Its structure consists of three different regions, namely Base, Emitter, and Collector. The Base region, which contains one positive doped layer and one negative doped layer, is much thinner than the two other layers. The two larger regions are responsible for the majority of the electrical current flow through the device.

Applications

The JANS2N5667 is highly versatile, being utilized within a massive range of analog and digital circuits. It is found in many different circuits, including voltage amplifiers, current amplifiers, switching circuits, motor control circuits, and many others. Additionally, it is also utilized for automotive applications, such as in the powertrain system and the engine control unit.

Working Principle

As with many other transistors, the two larger regions of the JANS2N5667 are used to control the electrical current flow through the device. The two larger regions, which are the Collector and Emitter regions, are used to carry the majority of the current through the device. The Base region is responsible for controlling the amount of current flowing into the Collector.The working principle behind the JANS2N5667 is simple. When a small voltage is applied to the Base region, the Base–Emitter junction is forward biased and a small current flows from the Base to the Emitter. This allows a greater current to flow from the Collector to the Emitter, thus allowing the JANS2N5667 to act as an amplifier or switch.

Conclusion

In conclusion, the JANS2N5667 is a single Bipolar Junction Transistor (BJT) device for general-purpose applications. It is an NPN transistor with a maximum collector power dissipation of 25W and is widely used in various analog and digital circuit designs. The JANS2N5667’s working principle is easily understandable and can be used as an amplifier or switch.

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