| Allicdata Part #: | 1086-16113-ND |
| Manufacturer Part#: |
JANS2N3500 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TRANS NPN 150V 0.3A TO-39 |
| More Detail: | Bipolar (BJT) Transistor NPN 150V 300mA 1W Throug... |
| DataSheet: | JANS2N3500 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | Military, MIL-PRF-19500/366 |
| Packaging: | Bulk |
| Part Status: | Active |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 300mA |
| Voltage - Collector Emitter Breakdown (Max): | 150V |
| Vce Saturation (Max) @ Ib, Ic: | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max): | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 150mA, 10V |
| Power - Max: | 1W |
| Frequency - Transition: | -- |
| Operating Temperature: | -65°C ~ 200°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package: | TO-39 (TO-205AD) |
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The JANS2N3500 is a popular bipolar junction transistor (BJT). The device is a single discrete component type, commonly used in electronic and electrical circuits. The JANS2N3500 is a general-purpose semiconductor for solid-state and power applications. It has a variety of features that make it a preferred choice for many semiconductor circuit designs.
The JANS2N3500 consists of three main parts: the emitter, the collector and the base. The emitter and collector are made of gallium arsenide semiconductor material and the base is made of a metal layer. The base is positioned between the collector and emitter and is separated from the two by a very thin layer of silicon dioxide. The base is used to control the current flow through the transistor; when no voltage is applied across the emitter-collector junction, the transistor is off, and when sufficient voltage is applied, the transistor is turned on, allowing current to flow.
The JANS2N3500 is typically used in electrical circuits as a switch, amplifier, or voltage regulator. It can also be used to convert one type of signal to another type of signal. As a switch, the JANS2N3500 is capable of handling up to 15 amps of current. As an amplifier, the device can provide up to 10 dB of gain. As a regulator, it is capable of regulating the voltage from 0.5V to 6V.
The JANS2N3500 is also capable of performing a number of other tasks, such as resetting circuits and providing surge protection. Additionally, it can be used to construct amplifiers and other components in digital and analog circuits as well as RF circuits.
The JANS2N3500 operates using the principle of current gain. In an NPN transistor, current entering the base is amplified by a certain factor and then increased in the collector. The current gain of the JANS2N3500 is around 300, depending on the configuration and environmental conditions. This means that for every current entering the base, the collector provides three times that amount of current.
The JANS2N3500 is also capable of providing voltage gain. When a voltage is applied to the base, it is amplified by a certain factor and then increased in the collector. The voltage gain of the JANS2N3500 is typically between 50 and 100, depending on the configuration and environmental conditions.
The JANS2N3500 is a popular single-discrete component type bipolar junction transistor (BJT). It is typically used in electronic and electrical circuits as a switch, amplifier, voltage regulator and other components such as resetting circuits, providing surge protection and constructing amplifiers and other components in digital and analog circuits as well as RF circuits. The device operates using the principle of current gain and voltage gain, allowing it to regulate voltage, amplify signals and provide surge protection, among other tasks.
The specific data is subject to PDF, and the above content is for reference
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JANS2N3500 Datasheet/PDF