JANSF2N2222AL Allicdata Electronics
Allicdata Part #:

JANSF2N2222AL-ND

Manufacturer Part#:

JANSF2N2222AL

Price: $ 55.01
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: NPN TRANSISTOR
More Detail: Bipolar (BJT) Transistor NPN 50V 800mA 500mW Thro...
DataSheet: JANSF2N2222AL datasheetJANSF2N2222AL Datasheet/PDF
Quantity: 1000
50 +: $ 50.00260
Stock 1000Can Ship Immediately
$ 55.01
Specifications
Series: Military, MIL-PRF-19500/255
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Power - Max: 500mW
Frequency - Transition: --
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-18
Description

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The JANSF2N2222AL is a PNP transistor, which falls under the category of single bipolar junction transistors. This type of transistor is widely used as an easy and affordable solution to switch electrical signals in various applications.

The transistor is capable of switching both AC and DC signals, but it is most commonly used for DC switch applications. As a result, the JANSF2N2222AL can be appropriately used in the fields of instrumentation, test equipment and general-purpose switching.

When this transistor is used as a switch, it can easily replicate a conventional on/off mechanism as is commonly used in mechanical switches. The PNP transistor requires a positive bias control voltage at the base terminal to turn “on” the switch, and it turns “off” when the base control voltage is removed.

When the transistor is switched “on”, the emitter-collector resistance is decreased due to forward bias that adds current gain to the transistor. This decrease in resistance translates to an increase in collector current and reduced collector-emitter voltage. On the contrary, when the transistor is switched “off”, the emitter-collector resistance increases, thus resulting in a decrease in both the collector current and base current.

The JANSF2N2222AL has a current gain capability that is higher than normal in the range from 20 to 1000 when the voltages are between the allowable limits of 0.5v and 30V for its collector and emitter base, respectively. It also has a Collector-base breakdown voltage of 40V and a power dissipation that is higher than the standard for this type of device at 500mW.

The JANSF2N2222AL can easily operate in temperatures from -55°C to + 150°C and meets a variety of tests for reliability, such as the 125°C operation test. Other than the switching application, this PNP transistor can be used to support applications related to the development of optoelectronic systems, inverter circuits and when additional functionality is required due to unequal loads.

Overall, the JANSF2N2222AL is a incredibly reliable and durable PNP transistor that is ideal for use in a variety of applications. Its high current gain capability and tolerance to extreme temperatures makes it a reliable and efficient choice for both commercial and industrial applications.

The specific data is subject to PDF, and the above content is for reference

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