Allicdata Part #: | JANSR2N3440-ND |
Manufacturer Part#: |
JANSR2N3440 |
Price: | $ 136.82 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | RH POWER BJT |
More Detail: | Bipolar (BJT) Transistor NPN 250V 1A Through Hol... |
DataSheet: | JANSR2N3440 Datasheet/PDF |
Quantity: | 1000 |
50 +: | $ 124.38900 |
Series: | Military, MIL-PRF-19500/368 |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1A |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 4mA, 50mA |
Current - Collector Cutoff (Max): | 2µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 20mA, 10V |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 200°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package: | TO-39 |
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Introduction
The JANSR2N3440 is a PNP-type, silicon-based, epitaxial-base transistor. It is specifically designed for use in audio-frequency amplifier circuits and gain control devices, and is suitable for a wide variety of general-purpose applications. The integrated circuit structure of this type of bipolar transistor enables it to provide higher gain, more stable performance, and lower power consumption than conventional bipolar transistors.
Features
- DC current gain: 10 – 20
- Current-gain bandwidth product:2 MHz
- Power dissipation: 250 mW
- Supply voltage range: 8 – 40 V
- Forward current transfer ratio: 200 – 460
- Reverse-current leakage at 25 °C: 0.2 μA
- Collector-emitter saturation voltage: 0.4 V
Working Principle
The JANSR2N3440 is a bipolar junction transistor (BJT) that consists of three sections, namely, the base, the collector, and the emitter. The base of the transistor is connected to a small control current flowing into the base, while the collector is connected to a larger current flowing out of the collector. The emitter is connected to the power supply and is responsible for the passage of the electric current to the collector and emitter. The magnitude of the current flowing through the transistor depends on the input current applied to the base. When the input current is increased, the transistor allows more current to flow through, as it is made up of a controlled semiconductor. Since the collector is connected to a larger current, the output current increases proportionately, and this is the principle of operation of the JANSR2N3440.
Applications
The JANSR2N3440 can be used in audio-frequency amplifier circuits and gain control devices, owing to its integrated structure and ability to handle higher gain, more stable performance, and lower power consumption. The device is also suitable for a wide range of linear, switching and high-power applications. Moreover, its fast switching time, low base current, and small size make the JANSR2N3440 ideal for use in high-volume applications, electronic motors, and transistors. In addition, this device is also often used in medium-power switching applications, such as laptops, cellular phones, and AC inverters.
Conclusion
The JANSR2N3440 is a high-performance, silicon-based transistor, specifically designed for audio-frequency amplifier circuits and gain control devices. This type of transistor provides higher gain, more stable performance, and lower power consumption than many other types of bipolar transistors. In addition, it is also suitable for a wide range of general-purpose applications, including linear, switching, and high-power applications. As such, the JANSR2N3440 is an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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