JANSR2N3501U4 Allicdata Electronics
Allicdata Part #:

JANSR2N3501U4MS-ND

Manufacturer Part#:

JANSR2N3501U4

Price: $ 99.72
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: BJTS
More Detail: Bipolar (BJT) Transistor
DataSheet: JANSR2N3501U4 datasheetJANSR2N3501U4 Datasheet/PDF
Quantity: 1000
100 +: $ 90.65210
Stock 1000Can Ship Immediately
$ 99.72
Specifications
Series: --
Part Status: Active
Transistor Type: --
Vce Saturation (Max) @ Ib, Ic: --
Current - Collector Cutoff (Max): --
DC Current Gain (hFE) (Min) @ Ic, Vce: --
Frequency - Transition: --
Operating Temperature: --
Mounting Type: --
Package / Case: --
Supplier Device Package: --
Description

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Transistors, also known as bipolar junction transistors (BJTs), are the most widely used active electronic components in countless electronic devices. They are three-terminal devices and have the ability to amplify electronic currents. The JANSR2N3501U4 is a widely used modern transistor which can be characterized as a BJT type and has a single polarity.

The JANSR2N3501U4 is an NPN silicon epitaxial transistor, which is suitable for general and switching applications over a wide range of frequencies. It has a maximum power dissipation rating (average junction temperature ≤150°C) of 500mW, a maximum collector-emitter voltage rating of 50V and a collector-emitter saturation voltage drop of 0.8V at 40mA. It also has a minimum current gain of 30 at -100mA, a minimum current gain of 10 at 50mA, and a leakage current of 100μA at -65V.

The JANSR2N3501U4 is suitable for many applications, such as audio amplification, voltage regulation, switching, oscillators, and more. It is also suitable for low-VCEsat applications when used in transistor switches thanks to its low saturation voltage. It has a wide range of switching frequencies and can be used in a variety of power sensing and temperature sensing applications. The JANSR2N3501U4 can also be used in motor control and current limiting circuits due to its good current gain linearity.

The working principle of the JANSR2N3501U4 is based on BJT theory. In an NPN transistor, two different types of semiconductor crystal are used—a positive material called P type, and a negative material called N type. The P type is the base, and the N type is connected to the emitter. These two semiconductors are connected together with a third terminal called the collector. When a current is applied to the base, electrons are attracted towards the base and form an amplification effect. This amplified current is then passed on to the emitter and collector, allowing the current to flow between them.

The JANSR2N3501U4 is a highly efficient transistor for use in a variety of applications. It has a wide range of switching frequencies, making it suitable for numerous applications requiring high-frequency switching. Additionally, its low saturation voltage and current gain linearity make it suitable for applications in motor control, current limiting, and power sensing. Its wide range of applications, high efficiency, and long-term reliability make the JANSR2N3501U4 an excellent choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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