Allicdata Part #: | JS28F256P30T2E-ND |
Manufacturer Part#: |
JS28F256P30T2E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256M PARALLEL 40MHZ |
More Detail: | FLASH - NOR Memory IC 256Mb (16M x 16) Parallel 40... |
DataSheet: | JS28F256P30T2E Datasheet/PDF |
Quantity: | 1000 |
Series: | StrataFlash™ |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (16M x 16) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
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JS28F256P30T2E Application Field and Working Principle
Memory is an important component in the global semiconductor industry and the design of memory chips has revolutionized the progress of semiconductor technology. Flash memory technology in particular has experienced rapid development in recent decades and JS28F256P30T2E is emerging as one of the most popular flash memory products in the market.
Application Field of JS28F256P30T2E
JS28F256P30T2E is a 28F-type flash memory chip manufactured by Fujitsu and is suitable for a wide range of applications including storage of system configuration parameters, data processing, image storage and information memory in digital products such as mobile phones, navigation systems and digital cameras. The chip features an 8-bit bus with 256M byte capacity and boasts the highest transfer rate in its class at 30M byte/s.
The chip offers low power consumption and its ECC (Error Correction Code) program and data read/write function allows for more reliable data processing and storage. Furthermore, due to its ease of programming and wide compatibility, JS28F256P30T2E is gaining traction among consumers, especially in the automotive electronics segment.
Working Principle of JS28F256P30T2E
JS28F256P30T2E is a NAND flash memory device. In contrast to NOR flash memories, NAND memories require the controller to exchange less control signals with the chip and can therefore achieve higher transfer speeds. For example, JS28F256P30T2E can achieve read/write speeds of up to 30M byte/s.
The memory chip operates on a multi-level cell (MLC) flash technology, whereby two bits of data are stored in each single cell on the chip. For example, the number 0-3 can be stored on MLC flash by connecting the two storage levels to an external voltage source, with the level of voltage determining the data stored.
The controller of the chip is capable of controlling up to 4,096 bytes at a time when writing data. Using an internal error correction code (ECC), the controller can detect and recover data during read-out operations, thus ensuring a high level of data accuracy and reliability. Furthermore, the chip is capable of undergoing up to 1,000,000 erase/write cycles before it fails.
Conclusion
In conclusion, JS28F256P30T2E is a high-performance multi-level-cell (MLC) flash memory chip with a capacity of 256MB, ECC program and data read/write functions and the highest transfer rate in its class at 30M byte/s. Its wide compatibility and easy programming features has made the chip a popular choice among consumers, particularly in the automotive electronics market. The chip can also undergo up to 1,000,000 erase/write cycles before ultimately failing.
The specific data is subject to PDF, and the above content is for reference
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