Allicdata Part #: | 557-1625-ND |
Manufacturer Part#: |
JS28F00AM29EWHA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1G PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Par... |
DataSheet: | JS28F00AM29EWHA Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (128M x 8, 64M x 16) |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | 28F00AM29EW |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory: JS28F00AM29EWHA application field and working principle
The JS28F00AM29EWHA is a set of nonvolatile, electrically erasable programmable read-only memory (EEPROM) devices built with a new, highly reliable low-voltage process technology. This product family provides an efficient solution to store codes or various data such as product information, revision tracking, customer preferences, system settings, calibration and other critical data that needs to be saved even when the system power is off.
Application Field:
- Data logging
- Automotive systems
- Consumer electronics
- Wireless handsets
- Medical devices
- Industrial automation
Working Principle:
The JS28F00AM29EWHA contains 128K bytes of memory which are organized as 16K rows and 8 columns. Each row is made up of a nine-byte page with 8 bytes of data and one byte of spare. The page is the basic read/write unit for the JS28F00AM29EWHA and the size of the page allows for EEPROM data to be stored in code words that are up to 8-bytes long including a parity bit for each byte.
During the programming cycle, charge is transferred from the cell to the bit line. During the erasing cycle, the charge is transferred from the bit line to the cell. The applied voltage during the programming cycle is higher than the voltage during erasing. In both cases, the charged bit line helps in creating a strong field within the selected memory cell and enables the charge to be transferred to or from the cell.
The JS28F00AM29EWHA also has an internal process which helps in detecting write or erase errors. It also helps to protect the data stored in the memory cells from any unexpected errors or fluctuations. It also helps to conserve power and improves the device\'s reliability and endurance.
The JS28F00AM29EWHA is designed for a wide range of applications including consumer electronics, automotive systems, wireless handsets, data logging, medical devices, and industrial automation. It provides an efficient solution for storing codes or various data such as product information, revision tracking, customer preferences, system settings, calibration, and other critical data that needs to be saved even when the system power is off.
The specific data is subject to PDF, and the above content is for reference
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