Allicdata Part #: | JS28F064M29EWBA-ND |
Manufacturer Part#: |
JS28F064M29EWBA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral... |
DataSheet: | JS28F064M29EWBA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8, 4M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | JS28F064 |
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JS28F064M29EWBA Application Field and Working Principle
JS28F064M29EWBA is a 64 Mbit (8 Megabytes) non-volatile NAND Flash memory providing higher density, non-volatile storage solutions. It has the highest density among NAND Flash products on the market with 64 Mb or 8,388,608 bytes of memory. JS28F064M29EWBA can be used in computers and other peripheral equipment such as flash drives, solid state drives, and digital cameras. The device includes a 64-bit wide bus interface, advanced error correction and 2K byte of on-populate ECC redundancy. It is compliant with the JEDEC NAND Flash standard.
Application Field
JS28F064M29EWBA can be used in many applications from medical and industrial to automotive, consumer and commercial products, such as:
- Solid State Drives (SSDs)
- USB Flash Drives
- Digital Camera Storage and Memory Expansion
- Cell phones
- MP3 Players
- PDAs
- Electronic Notebooks
- Industrial Control Systems
- Medical Equipment
- Set-top Boxes
- Navigational Devices
Working Principle
JS28F064M29EWBA is a NAND-type Flash, which is a type of Flash memory where the memory cells are connected in a series of blocks. Each cell can either be programmed to store a “1”, or remain without being programmed, representing a “0”. The "blocks" are a section of memory inside the device that are made up of the series of memory cells. A block will be erased each time a write command is issued to ensure all cells are in a non-programmed state. This erasing process is typically done without any user interaction.
To store data, the memory must be programmed (written to). Data is written to a memory cell by applying a voltage to the cell and then verifying that the cell has been correctly programmed (write verification). To read data, a voltage is applied to the cell, which causes a current to flow through the cell. This current is then read and its level is converted back into data which is then sent to the controller.
Conclusion
JS28F064M29EWBA is a 64 Mbit (8 Megabytes) non-volatile NAND Flash memory that is suitable for use in a variety of applications. It has the highest density among NAND Flash products on the market. It includes a 64-bit wide bus interface, advanced error correction and 2K byte of on-populate ECC redundancy. It is compliant with the JEDEC NAND Flash standard. The device operates according to the NAND-type Flash principle, where data is written to the cells in blocks that are erased prior to writing. This ensures that all cells are in a non-programmed state. Data is written and read by applying a voltage to the cells and then verifying that the cell has been correctly programmed (write verification).
The specific data is subject to PDF, and the above content is for reference
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