JS28F256P30B95B TR

The JS28F256P30B95B TR is a non-volatile memory device often used for industrial applications. It offers a wide range of features and advantages, including low power consumption, reliable reliability and high density. The device is capable of storing up to 32 Mbits of data, a significant amount for applications such as engineering and industrial automation.

Application Field

The JS28F256P30B95B TR is often used in a range of engineering applications, most notably for enabling faster and more efficient decision-making processes. It can be used in industrial automation to handle large amounts of data such as process instructions, or as a memory storage device for collected data.

The device is also popular in automotive applications, where it can store large amounts of data such as alarms, warnings, and maintenance schedules. The device is optimised for power-saving modes with low standby current, making it well-suited for long-term, low-power data storage in often harsh environments.

Working Principle

The JS28F256P30B95B TR is an electrically erasable programmable ROM device that stores data in a serial ROM memory cell array. It configures a non-volatile arbitrary address space for non-volatile storage applications.The device is organised into 4096 words by 8 bits and offers a flexible block erase and segment programming option, as well as page-mode read and write access.

Data stored in the device is typically accessed via JTAG, serial peripheral interface (SPI), or USB. The data is written and erased on the device using differential signaling (DIFS) and a three-level voltage inteface for programming, non-volatile storage space security, and device write protection.

In addition to its excellent endurance levels, the JS28F256P30B95B TR offers excellent data retention characteristics, with an expected data life of up to sixty-five years. The device offers a wide supply voltage range of 2.7V to 3.6V, making it compatible with a broad range of applications.

Conclusion

The JS28F256P30B95B TR is a powerful, low-power non-volatile memory device that is well-suited for a range of industrial engineering and automation applications. The device offers a wide supply voltage range and an expected data life of up to sixty-five years, making it a robust choice for memory storage and retrieval.