Allicdata Part #: | JS28F512P30TFA-ND |
Manufacturer Part#: |
JS28F512P30TFA |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 40... |
DataSheet: | JS28F512P30TFA Datasheet/PDF |
Quantity: | 1000 |
Series: | Axcell™ |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | 28F512P30 |
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The JS28F512P30TFA device is a popular choice for many memory needs. It is a single-transistor floating-gate non-volatile memory, constructed on a CMOS process. This is a significant advantage as it allows faster performance while maintaining a high level of energy efficiency.
The JS28F512P30TFA is most commonly used for non-volatile storage applications such as data retention, code storage, client authentication, and other non-volatile applications. It is also used in embedded applications such as automotive, consumer electronics, and medical electronics. This makes it a versatile memory choice for many different application areas.
The JS28F512P30TFA is available in four package photos: a 48-pin TSOP II 0.75mm pitch, a 48-pin TFBGA 0.75mm pitch, an 8-pin WLCSP package, and a 48-pin TFBGA 1mm pitch photo. The device is available in two speed grades, an ultra-low-power version (ULP) and a low-power version (LP). The ULP version has three endurance levels (10K, 100K, and 1M) and two write speeds (2Mhz and 10Mhz) while the LP version has two endurance levels (1M and 10M) and two write speeds (10Mhz and 20Mhz).
The JS28F512P30TFA memory works based on the traditional floating-gate structure. Data is presented as a charge level on the floating gate of a transistor and is stored until it is written with new data. A single word line can be used to select and write the required data within the block. The JS28F512P30TFA device also uses multi-bank architecture which enables fast program/erase time and fast random access. When the block of memory is in program/erase state, it can be read as normal. In addition, the device has a set of security features that are enabled by fuse bits that are programmed at the time of manufacture.
The JS28F512P30TFA is a highly reliable memory solution with a 10-year data retention guarantee and a wide range of erasure cycles from 10K (ULP version) to 10M (LP version). It also has data encryption, block locking, and hardware reset features for increased security. Furthermore, the wide range of speed grade options and power modes allows for maximum flexibility in a wide range of applications.
The JS28F512P30TFA is a reliable, versatile memory solution that is ideal for many different types of applications. The device is built on a CMOS process, has a wide range of speed grades, and supports multi-bank architecture. It is also highly energy efficient and has a wide range of security features. This makes it very suitable for non-volatile storage and embedded applications such as automotive, consumer electronics, and medical electronics.
The specific data is subject to PDF, and the above content is for reference
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