JS28F640J3D75B TR Integrated Circuits (ICs) |
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Allicdata Part #: | JS28F640J3D75BTR-ND |
Manufacturer Part#: |
JS28F640J3D75B TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 64M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral... |
DataSheet: | JS28F640J3D75B TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | StrataFlash™ |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 64Mb (8M x 8, 4M x 16) |
Write Cycle Time - Word, Page: | 75ns |
Access Time: | 75ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | 28F640J3 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The JS28F640J3D75B TR memory is a part of the Extended-Data-Output (XDO) family of flash devices from Intel. This device has a top-notch feature set that includes a high-speed write performance, reliable 1T programming, a two-wire boot flexibility, and a three-cycle latency. Additionally, this device is packaged in a 48pin TSOP2 package with a unique pin for a secondary reset line and an additional feature for an enhanced security.
The JS28F640J3D75B TR is used in several application fields, in particular aerospace and automotive applications. This device is designed to meet the stringent requirements of these application fields, such as high temperature range operation, high reliability, and wide voltage and temperature extremes. This type of memory is often used in embedded applications, such as industrial and scientific instrumentation, telecommunications systems, avionics, and networking.
The JS28F640J3D75B TR device features the new 18nm production technology. This advanced technology ensures that the device can outperform traditional memories in numerous performance aspects. The device is well suited for applications that have a high write-throughput requirement, such as flash programming, data capturing, and code debugging. In addition, the JS28F640J3D75B TR has two programmable lead-as-source (LAS) modes that enable the device to interact with other devices or devices on the same chip. Therefore, the device can be used in a wide range of system designs.
The JS28F640J3D75B TR uses the 3D Multi-Level Cell (MLC) storage technology. This technology allows for more storage capacity which is ideal for applications that require long-term data storage for reliable operation. This device is programmable with the two-wire boot protocol as well as the Intel-C3/C4/C5 Option B protocol. The two-wire boot is based on a serial interface where the control circuitry uses specific command-level control and data transfer to manage the programming cycle. The Intel-C3/C4/C5 Option B protocol is based on a parallel interface that uses the Internal Cycling Algorithm (ICA) to enhance the programming speed and increase the reliability of the programming.
In addition, the JS28F640J3D75B TR has improved security features which enhance data integrity and prevent unauthorized use. The power-on reset (POR) prepares the device for program commands and allows the protection status of the memory space to be reset. The Optional Secondary Reset (OSR) further secures the memory space. The device also has additional features such as special command Bit Cover Register (BCR) and Erase Lock Trigger (ELT) which can be used to prevent unauthorized access.
Overall, the JS28F640J3D75B TR is an advanced and reliable embedded memory device that can be used for various applications, particularly aerospace and automotive applications. It is a high-speed, two-wire boot-capable memory with advanced security features and extended temperature support. Its 3D MLC technology allows for more storage capacity which makes it suitable for applications that require long-term data storage. Its improved security features provide additional protection against unauthorized access.
The specific data is subject to PDF, and the above content is for reference
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