Allicdata Part #: | JS28F512P30EF0-ND |
Manufacturer Part#: |
JS28F512P30EF0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 512M PARALLEL 56TSOP |
More Detail: | FLASH - NOR Memory IC 512Mb (32M x 16) Parallel 40... |
DataSheet: | JS28F512P30EF0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Clock Frequency: | 40MHz |
Write Cycle Time - Word, Page: | 110ns |
Access Time: | 110ns |
Memory Interface: | Parallel |
Voltage - Supply: | 1.7 V ~ 2 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP (14x20) |
Base Part Number: | 28F512P30 |
Series: | Axcell™ |
Packaging: | Tray |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Description
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JS28F512P30EF0 Application Field and Working PrincipleJS28F512P30EF0 is a Flash memory IC developed by Intel and adopted by many device manufacturers. In its most basic form, it is a non-volatile storage device that stores data without power. It can store data like a hard drive, but it is much lighter and slimmer, making it ideal for mobile storage applications.In addition, unlike the magnetic tape storage devices of the time, JS28F512P30EF0 offered random access, meaning it can randomly access any part of the memory without having to read the whole. This made the device much faster and more efficient. Beyond its simple use as a non-volatile storage device, the JS28F512P30EF0 is designed to be highly reliable and robust. This means that the data stored on it does not deteriorate over time, meaning it is more suitable for long-term data archiving than other storage technologies. Additionally, the device is designed to withstand shock, vibration and other physical impacts, making it ideal for involving in transportation and other extreme environments.JS28F512P30EF0 also has the advantage of being extremely low power, making it perfect for use with battery-powered devices. Additionally, the device has a low cost per bit, making it an attractive choice for applications using large amounts of data storage.The working principle of JS28F512P30EF0 is relatively straightforward. When an application needs to store data, the device requests the data from the processor, stores it, and returns a confirmation to the processor. When the application needs to read the data, it requests it from the device, which then returns the requested data. The device consists of three main parts - the NOR Flash Memory Cell, the Flash Controller, and the Power Control Unit. The NOR Flash Memory Cell is the main component of the device, consisting of transistors and gates, responsible for storing and retrieving data from the device. The Flash Controller controls the communication interface between the device and the processor and controls how the data is written, erased, and read. The Power Control Unit monitors the device\'s power, folding back the voltage when the device\'s power threshold is exceeded, ensuring the device\'s power stays within the recommended limits. In conclusion, the JS28F512P30EF0 is a versatile Flash memory IC, offering high reliability and low power usage. Its random access and low cost per bit make it ideal for applications needing large amounts of non-volatile storage and its ability to withstand shock and vibration make it suitable for use in extreme environments.
The specific data is subject to PDF, and the above content is for reference
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