JS28F00AM29EWLA Allicdata Electronics
Allicdata Part #:

JS28F00AM29EWLA-ND

Manufacturer Part#:

JS28F00AM29EWLA

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 1G PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Par...
DataSheet: JS28F00AM29EWLA datasheetJS28F00AM29EWLA Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8, 64M x 16)
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)
Base Part Number: 28F00AM29EW
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an integral component in any computing system, providing non-volatile storage for vital information such as program code, operating system commands and user preferences. The type of memory chosen for an application can have a significant impact on system performance and cost. One type of memory commonly used in many microcontroller products is the JS28F00AM29EWLA Flash Memory. Understanding the application field and working principles of this device can be beneficial when selecting memory solutions.

The JS28F00AM29EWLA Flash Memory is a 4Mb, 3.0V, Boot Block Flash memory device, offering divided Sector Erase, Read and Program modes with an extended temperature range of -40°C to +85°C. It typically used for code or data storage applications in temperature-sensitive or humid environments. Typical application fields for this type of memory include automotive, industrial and consumer products, such as navigation and remote controls systems.

The basic working principle of the JS28F00AM29EWLA Flash Memory is based on the principle of floating gate technology. It is essentially a hybrid of erasable programmable read-only memory (EPROM) and masked ROM, offering both non-volatile Flash data retention and the flexibility of an EPROM. The device also allows for field programmability, allowing the memory to be programmed or reprogrammed after manufacture, ensuring changes can be implemented quickly and cost effectively.

The JS28F00AM29EWLA Flash Memory is well suited for applications requiring high density data storage, high speed operation and low power consumption. It offers a maximum random access time of 70ns, Fast Erase time of 1ms and a typical Erase-Write cycle time of 500ms. As it is constructed is a single chip package, it also saves on PCB space and cost, making it an ideal choice for space- & cost-sensitive applications.

In summary, the JS28F00AM29EWLA Flash Memory is a high density, low-power, non-volatile memory with wide application fields. Its fast read and program speeds, coupled with its extended temperature range, make it well suited for a wide range of embedded systems and automation applications. Understanding its application fields and working principles can help when selecting memory solutions for existing or future projects.

The specific data is subject to PDF, and the above content is for reference

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