JS28F320J3D75E Allicdata Electronics
Allicdata Part #:

JS28F320J3D75E-ND

Manufacturer Part#:

JS28F320J3D75E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M PARALLEL 56TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: JS28F320J3D75E datasheetJS28F320J3D75E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: StrataFlash™
Packaging: Tray 
Part Status: Discontinued at Digi-Key
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 75ns
Access Time: 75ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)
Base Part Number: 28F320J3
Description

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Memory

JS28F320J3D75E is a type of non-volatile flash memory from Spansion (formerly known as AMD). It is currently used in automotive, handheld and consumer products due to its high density and inherent reliability. The chip has an access time of 45 ns, which means it can write or read data in approximately 45 billionths of a second. It also features a maximum of 4.8Mbytes of addressable memory, organized with a 2kB page size.

This type of memory is used in electronic designs which require non-volatile data storage and retrieval. Its embedded architecture allows the JS28F320J3D75E to retain data even when powered off, or when transported to different locations. This makes it a great choice for products which are used in low-power and mobile environments, since the memory can easily store important information without the need for an external power source.

In order to understand how this type of memory works, it is important to understand its internal structure. It consists of a set of cells which can be programmed to represent a given memory address. Each cell is made up of two layers, the first being an array of transistors and the second layer consisting of a layer of aluminium oxide. A typical cell measures six-hundredths ( 0.06 ) of a millimetre and has a storage capacity of 512 bytes.

The transistor layer of the cell acts as a switch, controlling the flow of electrical current. By programming the cell\'s address and data signal, a given cell’s state is changed, allowing it to recall a given data signal when its address is matched. This is similar to how a regular SRAM or DRAM chip works.

The aluminium oxide layer of the cell is responsible for storing the data after it has been written. This layer can be programmed in two different ways by the microcontroller. The first is the write operation, where digital bits of information are programmed into the cell. The second is the erase operation, where all existing data within the cell’s memory is removed.

Thanks to its high density, fast access time and embedded design, JS28F320J3D75E has become a popular choice for many products in the automotive, handheld, and consumer industries. Its non-volatile features are ideal for any application where data must be stored and retrieved quickly and reliably.

The specific data is subject to PDF, and the above content is for reference

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