
KSC1008YTA Discrete Semiconductor Products |
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Allicdata Part #: | KSC1008YTATB-ND |
Manufacturer Part#: |
KSC1008YTA |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 60V 0.7A TO-92 |
More Detail: | Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 0.06000 |
10 +: | $ 0.05820 |
100 +: | $ 0.05700 |
1000 +: | $ 0.05580 |
10000 +: | $ 0.05400 |
Specifications
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 700mA |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 50mA, 2V |
Power - Max: | 800mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC1008 |
Description
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KSC1008YTA application field and working principle
The KSC1008YTA is a single bipolar junction transistor (BJT) with an embedded integrated circuit (IC). It is designed to be used in high-voltage circuit applications such as power supplies and other power circuits. The device is a monolithic integrated circuit which offers a low costs alternative to using discrete transistors.The KSC1008YTA has an emitter-base breakdown voltage of 50v and a collector-base breakdown voltage of 75v. The device can handle up to 1A of collector current and comes in a three-wire package. The internal construction of this device is similar to that of a conventional BJT, but with additional circuitry to provide a wider range of performance.As with all transistors, the KSC1008YTA is a three-terminal solid-state device that works by controlling the current flowing from the emitter to the collector through the base. The base-emitter junction is forward biased and the collector-base junction is reverse biased. When forward biased, the base-emitter junction forms a diode which allows electrons to flow from the emitter to the base. These electrons in turn create a current flow between the collector and emitter terminals and the transistor amplifies this current flow.The KSC1008YTA is a low power consumption device and is suitable for dc-dc converters and other power switch applications. Its smaller size makes it ideal for space-critical applications. It has a very good frequency response and is suitable for high-frequency switching. Its low cost and excellent performance make it a popular choice for a wide range of power applications.The KSC1008YTA is a reliable device that has been tested and found to perform well in a variety of power applications. It is capable of handling up to 1A of collector current and has a safe operating region of up to 250mA. It is also capable of stand-by modes up to400mA.The KSC1008YTA is an invaluable tool for designers of power circuits due to its small size, low power consumption and excellent performance. It is a reliable device that is suitable for a range of applications. Its main advantage is its low cost and good performance, which makes it an ideal choice for a wide range of applications.The specific data is subject to PDF, and the above content is for reference
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