KSC1008YTA Allicdata Electronics

KSC1008YTA Discrete Semiconductor Products

Allicdata Part #:

KSC1008YTATB-ND

Manufacturer Part#:

KSC1008YTA

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.7A TO-92
More Detail: Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW...
DataSheet: KSC1008YTA datasheetKSC1008YTA Datasheet/PDF
Quantity: 1000
1 +: $ 0.06000
10 +: $ 0.05820
100 +: $ 0.05700
1000 +: $ 0.05580
10000 +: $ 0.05400
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Power - Max: 800mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSC1008
Description

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KSC1008YTA application field and working principle

The KSC1008YTA is a single bipolar junction transistor (BJT) with an embedded integrated circuit (IC). It is designed to be used in high-voltage circuit applications such as power supplies and other power circuits. The device is a monolithic integrated circuit which offers a low costs alternative to using discrete transistors.The KSC1008YTA has an emitter-base breakdown voltage of 50v and a collector-base breakdown voltage of 75v. The device can handle up to 1A of collector current and comes in a three-wire package. The internal construction of this device is similar to that of a conventional BJT, but with additional circuitry to provide a wider range of performance.As with all transistors, the KSC1008YTA is a three-terminal solid-state device that works by controlling the current flowing from the emitter to the collector through the base. The base-emitter junction is forward biased and the collector-base junction is reverse biased. When forward biased, the base-emitter junction forms a diode which allows electrons to flow from the emitter to the base. These electrons in turn create a current flow between the collector and emitter terminals and the transistor amplifies this current flow.The KSC1008YTA is a low power consumption device and is suitable for dc-dc converters and other power switch applications. Its smaller size makes it ideal for space-critical applications. It has a very good frequency response and is suitable for high-frequency switching. Its low cost and excellent performance make it a popular choice for a wide range of power applications.The KSC1008YTA is a reliable device that has been tested and found to perform well in a variety of power applications. It is capable of handling up to 1A of collector current and has a safe operating region of up to 250mA. It is also capable of stand-by modes up to400mA.The KSC1008YTA is an invaluable tool for designers of power circuits due to its small size, low power consumption and excellent performance. It is a reliable device that is suitable for a range of applications. Its main advantage is its low cost and good performance, which makes it an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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