KSC1393RTA Allicdata Electronics
Allicdata Part #:

KSC1393RTA-ND

Manufacturer Part#:

KSC1393RTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR NPN 30V 20MA TO-92
More Detail: RF Transistor NPN 30V 20mA 700MHz 250mW Through Ho...
DataSheet: KSC1393RTA datasheetKSC1393RTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 30V
Frequency - Transition: 700MHz
Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
Gain: 20dB ~ 24dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 10V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSC1393
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

KSC1393RTA transistors are versatile and highly efficient devices used in a variety of applications. They are designed for RF (Radio Frequency) signal amplification, allowing for the transmission and reception of signals over large distances. Additionally, KSC1393RTA transistors can be used for signal processing and signal mixing, making them well suited for a variety of applications.

The most prominent feature of KSC1393RTA transistors is their characteristic design. They are a three-terminal asymmetric planar (TAP) technology transistor type, having two control terminals and one emitter terminal. The two control terminals are the base and the collector and the emitter terminal is labeled as the emitter. Due to the close proximity of the emitter and collector, these transistors are also referred to as "closely-spaced TAP" devices.

The working principle of KSC1393RTA transistors is similar to that of other bipolar junction transistors (BJTs). A small signal current is applied to the base terminal and this current is then amplified by the collector-emitter junction. The current gain is typically represented by the alpha hFE of the base-collector junction. This parameter represents the relative output current to the input signal current and is usually in the range of 10 to 20 kΩ.

Due to their versatility and efficiency, KSC1393RTA transistors can be used in a wide range of applications. These include mobile communications, base station radio amplifiers, satellite communication, automotive systems, and home appliances. They are used to amplify low-power signals to allow for long-distance transmission. Furthermore, they are suitable for use as linear voltage amplifiers, allowing for the processing and mixing of digital and analog signals.

In conclusion, KSC1393RTA transistors are a versatile and highly efficient device ideal for RF signal amplification. They have a three-terminal asymmetric design allowing for a high level of performance and are used in numerous applications such as mobile communications, automotive systems, and home appliances. The working principle is similar to that of other BJTs, and the alpha hFE of the base-collector junction allows for an efficient signal amplification.

The specific data is subject to PDF, and the above content is for reference

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