Allicdata Part #: | KSC1393RTA-ND |
Manufacturer Part#: |
KSC1393RTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR NPN 30V 20MA TO-92 |
More Detail: | RF Transistor NPN 30V 20mA 700MHz 250mW Through Ho... |
DataSheet: | KSC1393RTA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Frequency - Transition: | 700MHz |
Noise Figure (dB Typ @ f): | 2dB ~ 3dB @ 200MHz |
Gain: | 20dB ~ 24dB |
Power - Max: | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 2mA, 10V |
Current - Collector (Ic) (Max): | 20mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC1393 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
KSC1393RTA transistors are versatile and highly efficient devices used in a variety of applications. They are designed for RF (Radio Frequency) signal amplification, allowing for the transmission and reception of signals over large distances. Additionally, KSC1393RTA transistors can be used for signal processing and signal mixing, making them well suited for a variety of applications.
The most prominent feature of KSC1393RTA transistors is their characteristic design. They are a three-terminal asymmetric planar (TAP) technology transistor type, having two control terminals and one emitter terminal. The two control terminals are the base and the collector and the emitter terminal is labeled as the emitter. Due to the close proximity of the emitter and collector, these transistors are also referred to as "closely-spaced TAP" devices.
The working principle of KSC1393RTA transistors is similar to that of other bipolar junction transistors (BJTs). A small signal current is applied to the base terminal and this current is then amplified by the collector-emitter junction. The current gain is typically represented by the alpha hFE of the base-collector junction. This parameter represents the relative output current to the input signal current and is usually in the range of 10 to 20 kΩ.
Due to their versatility and efficiency, KSC1393RTA transistors can be used in a wide range of applications. These include mobile communications, base station radio amplifiers, satellite communication, automotive systems, and home appliances. They are used to amplify low-power signals to allow for long-distance transmission. Furthermore, they are suitable for use as linear voltage amplifiers, allowing for the processing and mixing of digital and analog signals.
In conclusion, KSC1393RTA transistors are a versatile and highly efficient device ideal for RF signal amplification. They have a three-terminal asymmetric design allowing for a high level of performance and are used in numerous applications such as mobile communications, automotive systems, and home appliances. The working principle is similar to that of other BJTs, and the alpha hFE of the base-collector junction allows for an efficient signal amplification.
The specific data is subject to PDF, and the above content is for reference
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