KSC1008CYTA Allicdata Electronics
Allicdata Part #:

KSC1008CYTATB-ND

Manufacturer Part#:

KSC1008CYTA

Price: $ 0.04
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.7A TO-92
More Detail: Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW...
DataSheet: KSC1008CYTA datasheetKSC1008CYTA Datasheet/PDF
Quantity: 1000
1 +: $ 0.04000
10 +: $ 0.03880
100 +: $ 0.03800
1000 +: $ 0.03720
10000 +: $ 0.03600
Stock 1000Can Ship Immediately
$ 0.04
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Power - Max: 800mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSC1008
Description

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KSC1008CYTA is a type of transistor which belongs to the Bipolar Junction Transistor (BJT) family. Specifically, it is categorized as a single transistor. This type of transistor is mainly responsible for controlling the flow of current between two elements and/or two nodes. This transistor type is suitable for many applications, primarily because of its excellent switching performance and wide dynamic range, which can cover various frequencies.

In terms of its application field, KSC1008CYTA can be used in many applications such as audio amplifiers, radio frequency amplifiers and power supplies. Due to its excellent switching performance and wide dynamic range, KSC1008CYTA is particularly suitable for audio applications. Audio amplifiers require a wide dynamic range to produce good sound quality. KSC1008CYTA can also be used in radio frequency amplifiers. This type of transistor is also suitable for power supplies due to its excellent switching performance, which allows for precise current control and hence efficient power supply.

KSC1008CYTA transistors work on the principle of converting small amounts of electric current, when the base-emitter junction of the transistor is forward biased, into larger amounts of current by the collector-base junction, which is reverse biased. When the base-emitter junction is forward biased, electrons flow from the emitter to the base, creating a current which is proportional to the voltage applied to the base-emitter junction. This current further passes through the collector-base junction, which is reverse biased. As the bias of the collector-base junction is opposite to that of the base-emitter junction, the electric current passing through the collector-base junction is much larger than the base-emitter current.

The KSC1008CYTA transistor has a maximum gain of 800 at high frequency, a minimum on-resistance of 0.04 ohm, an operating temperature range of -55 to 125 degrees Celsius, an operating voltage range of 12 to 51 volts, and a maximum collector current of 0.5 ampere. These specifications make the KSC1008CYTA ideal for a number of applications which require precise switching performance.

Overall, KSC1008CYTA is a type of single transistor which belongs to the Bipolar Junction Transistor (BJT) family. It is particularly suitable for applications such as audio amplifiers, radio frequency amplifiers, and power supplies due to its excellent switching performance and wide dynamic range. It works on the principle of converting small amounts of electric current, when the base-emitter junction is forward biased, into larger amounts of current by the collector-base junction, which is reverse biased.

The specific data is subject to PDF, and the above content is for reference

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