Allicdata Part #: | KSC1173YTSTU-ND |
Manufacturer Part#: |
KSC1173YTSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 30V 3A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 30V 3A 100MHz 10W Thr... |
DataSheet: | KSC1173YTSTU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Vce Saturation (Max) @ Ib, Ic: | 800mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 2V |
Power - Max: | 10W |
Frequency - Transition: | 100MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
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The KSC1173YTSTU is a single-transistor bipolar junction transistor (BJT) that is used in a number of applications, from medical and industrial to wireless communication and automotive. This transistor offers outstanding gain linearity, excellent current handling capability,and low noise figure over its wide frequency range.
The KSC1173YTSTU is widely used in applications such as amplifier circuits, digital logic, oscillators, audio output stages and power amplification. This is due to its higher frequency performance, low power consumption, higher power handling capability and its strong current gain. It is also capable of handling high voltage and current thanks to its high collector-emitter breakdown voltage.
One of the main uses of the KSC1173YTSTU is in switching circuits. It can be used as an on/off switch for analog signals, such as in a signal preamplifier or in an electrically amplified dictation machine. It can also be used in a digital logic circuit as a logic element or as a cascading element coupled with other transistors. As it has a high voltage capability, it is also used in high voltage circuits.
The working principle of a bipolar junction transistor (BJT) is based on the behavior of electron current flowing in a vacuum tube. In a BJT transistor, there is a positive base region and a negative emitter region. These two regions form a p-n junction. When electrons flow through the base region, they enter the emitter region. This creates a depletion layer, which can be viewed as an insulating barrier that prevents further current flow.
The KSC1173YTSTU is basically a NPN type BJT, with an N-type semiconductor material as the base, and a P-type semiconductor material as the collector and emitter. When a small enough current is supplied to the base terminal of the transistor, a much larger current will flow from the collector to the emitter. The current gain of this transistor is usually denoted by the common-emitter current gain β. The higher the value of β the more amplified the current that has to be applied to the base terminal.
The KSC1173YTSTU has an excellent current gain β of approximately 45 and is also very efficient in terms of heat dissipation, as it has an excellent current driven capability and low on-state voltage drop. With its high collector current and low noise figure, it is a great choice for many applications. It is also very reliable and has a long life, making it a great choice for high performance applications.
In conclusion, the KSC1173YTSTU is a versatile and reliable transistor that offers excellent current gain and low power consumption, making it a great choice for a variety of applications. With its high voltage and current capabilities and excellent gain linearity, it is also a great choice for any design requiring high performance and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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