KSC1008GBU Allicdata Electronics
Allicdata Part #:

KSC1008GBU-ND

Manufacturer Part#:

KSC1008GBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 60V 0.7A TO-92
More Detail: Bipolar (BJT) Transistor NPN 60V 700mA 50MHz 800mW...
DataSheet: KSC1008GBU datasheetKSC1008GBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Power - Max: 800mW
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSC1008
Description

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The KSC1008GBU is a bipolar junction transistor (BJT) that is used in electronic circuits for amplification, switching, voltage regulation and other purposes. It is a single, NPN bipolar transistor with a rated collector current of 1 ampere and a maximum power dissipation of 500 milliwatts. It is designed for use in applications such as industrial heating and control, automobile and communications applications, and is suitable for higher frequencies.

The KSC1008GBU is a medium-speed device, with a minimum switching frequency of 0.25 MHz and a maximum collector current of 1 ampere. It is rated for operation over a temperature range of -55°C to 175°C. It has an HFE minimum of 60 at 500mA, and a Collector-Emitter voltage of 45 V. It also has a very low leakage current, making it suitable for energy-saving applications.

The KSC1008GBU has two distinct operating modes. In the common-base configuration, it is a voltage amplifier, with a high impedance input, and high voltage gain. It can also be used as an isolated amplifier, where the input is high and the output is low. When used as an isolated amplifier, the KSC1008GBU has relatively low power consumption and can be used to control the voltage across a load. The KSC1008GBU has a breakdown voltage of 45 Volts, which makes it suitable for use in automotive circuits.

The KSC1008GBU also has a current gain, which is also known as the hFE, or ‘current amplification factor’. This is the ratio of the collector current to the base current, and is measured at a given collector-emitter voltage and current. The current gain depends on the collector current and can be used to control the amount of current that flows through a circuit. The maximum current gain of the KSC1008GBU is 120 at 500mA.

The KSC1008GBU\'s main purpose is as a switching transistor, which can be used as a switch, or as a amplifier. As a switch, it can be used to activate and deactivate a circuit or to control the direction of current flow in a circuit. When used as an amplifier, it increases the power of the signal. It can also be used as a voltage regulator, where it regulates the output by varying the resistance in the circuit.

The KSC1008GBU is a good choice for many applications that require amplification and switching, due to its high current gain, low power consumption and low voltage breakdown. It is also suitable for use in applications that require precise control of current input and output, as it can be used to regulate the voltage through a load. With its low power consumption, wide temperature tolerance and wide voltage range, the KSC1008GBU can be used in a wide variety of applications without any difficulty.

The specific data is subject to PDF, and the above content is for reference

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