Allicdata Part #: | KSC2756OMTF-ND |
Manufacturer Part#: |
KSC2756OMTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANSISTOR NPN 20V 30MA SOT-23 |
More Detail: | RF Transistor NPN 20V 30mA 850MHz 150mW Surface Mo... |
DataSheet: | KSC2756OMTF Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 20V |
Frequency - Transition: | 850MHz |
Noise Figure (dB Typ @ f): | 6.5dB @ 200MHz |
Gain: | 15dB ~ 23dB |
Power - Max: | 150mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 90 @ 5mA, 10V |
Current - Collector (Ic) (Max): | 30mA |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
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The KSC2756OMTF is a bipolar transistor from Fairchild Semiconductor. It is manufactured in a plastic package that is designed for surface mounted applications. The KSC2756OMTF is designed for use in RF power amplifiers and high frequency switching circuits. It is suitable for frequencies up to 1050 MHz.
The KSC2756OMTF is a NPN silicon planar epitaxial transistor with a low current consumption and high output power. It features built-in emitter ballasting resistors and is capable of delivering up to 18 watts of power output at frequencies up to 1050 MHz. The KSC2756OMTF includes built-in ESD protection, which makes it suitable for applications where ESD immunity is required.
The KSC2756OMTF can be used in a variety of applications, including mobile radio, base stations, digital radio, and industrial applications. It is suitable for use in amplifiers and other high frequency switching circuits where good linearity and high power output is required. It is also well suited for use in low noise amplifiers, frequency converters, and other gain circuits.
The working principle of the KSC2756OMTF is based on two basic principles of semiconductor operation: current flow and electron transfer. The NPN silicon planar epitaxial transistor has a base, collector, and an emitter region. When current flows through the base, electrons are transferred from the emitter region to the collector region, causing voltages at each of the transistor regions. The voltage at the base and the collector determines the current flow, while the voltage at the emitter determines the current gain and the output power.
The KSC2756OMTF is a highly efficient bipolar transistor that is suited for a variety of RF and high frequency applications. It features low current consumption and high output power and is capable of delivering up to 18 watts at frequencies up to 1050 MHz. With built-in emitter ballasting resistors and ESD protection, the KSC2756OMTF is an ideal choice for applications where high power output and high efficiency are required.
The specific data is subject to PDF, and the above content is for reference
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