KSC2073H2

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KSC2073H2 is a type of single bipolar junction transistor (BJT), and it is widely used in a variety of fields. This article will discuss its application field, working principle and structure.

Application FieldKSC2073H2 is a popular power transistor. It is a NPN type transistor and comes in a TO-220 package, making it ideal for use in power switching circuits such as on-off circuits for motors, relays and heaters. It also has a low saturation voltage, making it suitable for use in voltage regulators.

Working PrincipleA bipolar junction transistor (BJT) consists of three regions - an emitter, base and collector. The BJT is an active component and operates in three modes of operation - active, cutoff, and saturation. In active mode, it acts as a current amplifier, while in cutoff and saturation, it acts as a switch. The KSC2073H2 is a PNP type transistor and is constructed with a high concentration of "holes" (analogous to electrons for NPN) in the emitter region. When a positive voltage is applied to the base, holes are attracted from the emitter to the base and form a depletion region. As in the NPN transistor, a decreased voltage applied to the base causes current to flow from the collector to the emitter.

StructureThe KSC2073H2 is a vertical PNP type power transistor with a "built-in" P-trigonal silicon structure. It has a monolithic construction and is designed with a collector shield, collector-base built-in structure, emitter-base integral structure and a collector shield. The collector shield is designed to reduce noise, while the collector-base built-in structure prevents current leakage. The emitter-base integral structure ensures high junction stability and the collector shield helps to protect against parasitic oscillation, while providing heat dissipation.

In conclusion, the KSC2073H2 is a single bipolar junction transistor (BJT) with a variety of applications. It is a PNP type transistor and is constructed with a high concentration of "holes" in the emitter region. Its structure includes a collector shield, collector-base built-in structure, emitter-base integral structure, and a collector shield, making it an ideal choice for power switching circuits and voltage regulators.

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