Allicdata Part #: | KSC2688YSTU-ND |
Manufacturer Part#: |
KSC2688YSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 300V 0.2A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 200mA 80MHz 1.25... |
DataSheet: | KSC2688YSTU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 100 @ 10mA, 10V |
Power - Max: | 1.25W |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
Base Part Number: | KSC2688 |
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The KSC2688YSTU is a single bipolar junction transistor (BJT) designed for general purpose applications. It is a high gain BJT with low current consumption. It is capable of handling both small and large input signals with symmetrical output response. This makes it ideal for many applications, from simple switch circuits to voltage amplification.
The KSC2688YSTU is constructed as a single NPN transistor. The NPN structure of this BJT is made up of three layers: emitter, base and collector. Each layer has different properties that determine the way the transistors functions. The emitter layer is a thin layer of semiconductor material with a low resistance to electrical current. The base layer is slightly thicker and has a higher resistance to electricity than the emitter. It serves as a gate, allowing electricity to either enter or exit the transistor depending on the input signal. The collector layer is the thickest and has the highest resistance to electrical current of the three layers.
The working principle of KSC2688YSTU is based on the transistor’s three layer structure. When a small current of electricity is applied to the emitter, the base controls this amount of current and allows it to either increase or decrease in strength. This action is known as "current gain" and is the basis for the transistor’s amplification ability. The collector then collects the current after it is amplified by the base and emitter, and directs it to the output. By modulating the input signal, the KSC2688YSTU is able to amplify the current to a much higher voltage, increasing the power output of the device.
The KSC2688YSTU is designed for general purpose applications and can be used for a wide range of applications. One popular application for the KSC2688YSTU is in audio amplifiers, where it is used to boost the signal from one electronic device to another. It is also widely used in switching circuits, where it is used to activate or deactivate a circuit based on a voltage input. Other applications for this device include power circuits, amplifying weak radio signals, controlling motors, or interfacing with digital systems.
The KSC2688YSTU is a versatile and robust BJT that can be used in a variety of applications. Its high gain, low current consumption, and symmetrical output response make it the perfect choice for many different types of electronics projects. With its user-friendly design and reliable performance, the KSC2688YSTU can provide a wide range of functionality at a reasonable cost.
The specific data is subject to PDF, and the above content is for reference
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