Allicdata Part #: | KSC2330RBU-ND |
Manufacturer Part#: |
KSC2330RBU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 300V 0.1A TO-92L |
More Detail: | Bipolar (BJT) Transistor NPN 300V 100mA 50MHz 1W T... |
DataSheet: | KSC2330RBU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 20mA, 10V |
Power - Max: | 1W |
Frequency - Transition: | 50MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 Long Body |
Supplier Device Package: | TO-92-3 |
Base Part Number: | KSC2330 |
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The KSC2330RBU is a renowned single bipolar junction transistor from one of the leading semiconductor manufacturers, Taiwan Semiconductor Manufacturing Company. This transistor has gained immense popularity in many application fields, owing to its superior performance and reliability. This article focuses on the application field and working principle of the KSC2330RBU transistor.
The KSC2330RBU is mainly used in linear applications, due to its bi-polar design and excellent linearity. It is capable of delivering medium power output signals and is typically used in amplifiers, low noise audio amplifiers and RF amplifiers. This transistor has a wide frequency range of up to 5GHz, making it suitable for a variety of applications, including wireless communication systems. It also has excellent thermal stability and can withstand high temperatures.
In addition, the KSC2330RBU transistor also features an excellent current-voltage transfer ratio, making it an ideal choice for high-precision circuits. It offers excellent accuracy in terms of current gain and low distortion. This makes it an ideal choice for critical circuits in electronics and telecom equipment. Moreover, the KSC2330RBU is highly resistant to corrosion and EMI, making it suitable for a range of applications in industrial settings.
The KSC2330RBU’s working principle is based on the flow of current through two different materials. The transistor has three layers: an n-type layer and a p-type layer. The n-type layer is made up of pure silicon (Si) with a few extra electrons impurity. The p-type layer consists of boron impurity. When a voltage is applied between the two layers, current flows in the form of unidirectional holes (minority carriers) through the p-type layer. A base voltage is applied to the emitter to allow current to pass through the base. This regulates the current flow and results in amplification.
In conclusion, the KSC2330RBU is one of the most widely used single bipolar junction transistors in the market. It offers excellent performance and reliability for a range of applications, including linear and RF applications. Its low distortion and excellent thermal stability makes it an ideal choice for critical circuits in electronics and telecom. Moreover, its working principle is based on the flow of current through two different materials, allowing it to amplify the current and provide precise and precise signals.
The specific data is subject to PDF, and the above content is for reference
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