KSC2786OTA Allicdata Electronics
Allicdata Part #:

KSC2786OTA-ND

Manufacturer Part#:

KSC2786OTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR NPN 20V 20MA TO-92S
More Detail: RF Transistor NPN 20V 20mA 600MHz 250mW Through Ho...
DataSheet: KSC2786OTA datasheetKSC2786OTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Base Part Number: KSC2786
Description

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The KSC2786OTA is a high-frequency bipolar transistor, used in RF systems designing. It is mainly used in Radio Frequency (RF) power amplifiers, helping to boost the power of weak signals allowing them to cover a wider area in the broadcasting range. The KSC2786OTA is especially beneficial for digital audio broadcast (DAB) low-power device applications. This transistor has a high gain under different temperature conditions, making it perfect for Digital Frequency Modulation (DFM) applications.

The KSC2786OTA is a NPN transistor with a structure dedicated to low-power radio-frequency applications. It has an SOT23 package which is made up of three parts: the Darlington pair collector (collector emitter emitter), the emitter, and the current amplifier base. The Darlington pair collector of the KSC2786OTA is designed to have a very low on resistance, and the base consists of a gate and a base which are configured to provide higher gain and high cutoff frequency, while at the same time having very low on resistance.

This transistor is capable of exceeding 100 W of RF power output, making it perfect for high-power RF receivers and transmitters. The KSC2786OTA also features a broad frequency response, high frequency stability, low noise, and high breakdown voltage up to 80V. Because of these features, the KSC2786OTA is commonly used in RF amplifiers, DAB, DFM, and other low-power applications.

The KSC2786OTA is a three-terminal NPN transistor, meaning that with the help of two elements, it can function as a three-port switch. It is also considered a linear device, meaning that it can provide linear amplification of signals, while a non-linear device will produce either flat or distorted signals.

The KSC2786OTA\'s working principle is based around the base-emitter-collector configuration. This configuration is used in all really small signal transistors and consists of one p-type and two n-type PN junction that form an intrinsic diode. This diode acts as a rectifier, and when a current is applied to it, it creates an electric field that allows electrons to move between the junctions and cause a current change. This current change is what creates the amplification. The base-emitter connection changes the current flow to and from the emitter and collector, and this is how the transistor amplifies signals and provides the desired output.

The KSC2786OTA transistor has a lot of benefits that make it suitable for various applications. The high gain and high cutoff frequency, coupled with its low on resistance, make it a great choice for digital audio broadcast and Radio Frequency applications, while its linear properties make it suitable for linear amplifiers. The KSC2786OTA is also a low-power device, meaning it consumes less power than other transistors and can be used in many different battery powered electronics. Its different features and working principles make it a viable choice for many different kinds of products and applications.

The specific data is subject to PDF, and the above content is for reference

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