Allicdata Part #: | KSC5042MSTU-ND |
Manufacturer Part#: |
KSC5042MSTU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 900V 0.1A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 900V 100mA 6W Throug... |
DataSheet: | KSC5042MSTU Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 900V |
Vce Saturation (Max) @ Ib, Ic: | 5V @ 4mA, 20mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Power - Max: | 6W |
Frequency - Transition: | -- |
Operating Temperature: | -- |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
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KSC5042MSTU Application Field and Working Principle
The KSC5042MSTU is a single bipolar junction transistor (BJT). It is also known as a PNP transistor. It is designed for use in a variety of analog and digital circuits, and has a wide range of applications.
A transistor is a three-terminal semiconductor device that acts as an amplifier, oscillator, and switch, depending on the circuit design. It is composed of either p-type or n-type materials, separated by a thin layer of material called the base region. When a positive voltage is applied to the base, excited electrons (holes) collect in the base region, forming an avalanche of charge carriers, which then generate current in the emitter and collector regions.
A bipolar junction transistor (BJT) is a type of transistor which is composed of two PN junctions connected in parallel. PN junctions are semiconductor structures composed of p-type and n-type materials. When a voltage is applied across the PN junction, current flows through the junction, allowing current to flow between the two components of the transistor. The KSC5042MSTU is an example of a PNP BJT.
The KSC5042MSTU is a low-power BJT, designed to be used in a wide range of analog and digital applications. It has a current gain of 500 and is capable of operating within temperatures from -55°C to + 155°C. It is also designed to handle high ambient temperatures and high breakdown voltages. The KSC5042MSTU is designed for use in applications such as voltage regulators, DC-DC converters, power supplies, and audio amplifiers.
The KSC5042MSTU has three terminals: the emitter (E), the collector (C), and the base (B). The emitter is the source of current while the collector is the sink. The base is the controlling element of the current between the emitter and collector. When a small current is applied to the base, it modulates the flow of electrons, allowing more current to flow through the emitter and collector. The greater the base current, the greater the current flow between the emitter and collector.
The KSC5042MSTU is designed to operate with a small base current, usually in the micro- or nano-ampere range. This small base current allows for precise control over the current flow between the emitter and collector. This makes the KSC5042MSTU an excellent choice for use in analog and digital circuits that require precise control over current. The KSC5042MSTU is designed for use in signal circuits, and can be used to amplify, switch, or oscillate a signal.
The KSC5042MSTU is an inexpensive, reliable, and highly capable transistor. It is able to handle high ambient temperatures, high breakdown voltages, and a wide range of currents, making it applicable to a wide range of electronic and electrical applications. Due to its low power consumption, it is also suitable for use in battery-powered systems. The KSC5042MSTU\'s low-cost and reliable performance make it an excellent choice for those looking for a reliable PNP transistor.
The specific data is subject to PDF, and the above content is for reference
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