Allicdata Part #: | KSC5026MOS-ND |
Manufacturer Part#: |
KSC5026MOS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 800V 1.5A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 800V 1.5A 15MHz 20W T... |
DataSheet: | KSC5026MOS Datasheet/PDF |
Quantity: | 3293 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 800V |
Vce Saturation (Max) @ Ib, Ic: | 2V @ 150mA, 750mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 100mA, 5V |
Power - Max: | 20W |
Frequency - Transition: | 15MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126-3 |
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KSC5026MOS is a type of single bipolar junction transistor (BJT) that is designed to provide high frequency and large current capabilities in different kinds of applications. This transistor is among the most commonly used transistors for high-frequency power applications such as RF amplifier, radio circuits, and high speed switching circuits. It is widely used in consumer products such as cell phones, televisions, and computers.
The KSC5026MOS has two important features that make it a popular choice for many applications: high frequency operation and high current capabilities. The high frequency capability makes it ideal for amplifying RF signals while the high current capability makes it perfect for producing large output currents under various conditions. The device also has low ON resistance and noise levels, making it suitable for a wide range of applications.
The KSC5026MOS consists of two transistor devices, the complementary type (PNP) and the Darlington type (NPN). The first one has two power transistors connected in an arrangement that is known as a “complementary type”. This arrangement enhances the power handling capability of the device, allowing it to produce larger output currents than what a single device would be able to achieve. The second type is a “Darlington type” which is made up of a PNP and an NPN transistor connected in a series arrangement. This type of arrangement allows the device to produce larger output currents from a single device, while still providing relatively low ON resistance and noise levels.
The working principle of the KSC5026MOS is based on the basic principle of BJT operation, where electrons flow between the emitter and collector regions when the base current is applied to the device. The base current controls the amount of electrons flowing between the emitter and collector regions, and the amount of current flowing through the device. The current between the emitter and collector regions produces a voltage of 0.6 volts, which makes it suitable as an amplifier of RF signals.
The KSC5026MOS is used in a wide range of applications, including RF amplifiers, radio receivers and transmitters, high speed switching circuits, and consumer electronics. Due to its excellent performance, the device is often used for applications requiring high frequency or high current capabilities. It is also used in the automotive industry for applications such as stereo systems, antennas, and amplifiers. The device is also used in the medical industry for applications such as blood level monitoring, and oxygen concentrators.
The KSC5026MOS is an excellent choice for high-frequency power applications, due to its high current and frequency capabilities, as well as its low noise levels. It is capable of providing efficient and reliable performance in a wide range of applications, making it a popular choice for many different types of applications.
The specific data is subject to PDF, and the above content is for reference
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