KSC5020O Allicdata Electronics
Allicdata Part #:

KSC5020O-ND

Manufacturer Part#:

KSC5020O

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 500V 3A TO-220
More Detail: Bipolar (BJT) Transistor NPN 500V 3A 18MHz 40W Thr...
DataSheet: KSC5020O datasheetKSC5020O Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 500V
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 300mA, 5V
Power - Max: 40W
Frequency - Transition: 18MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Description

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The KSC5020O is a single NPN bipolar transistor specially designed for medium current general purpose amplification and switching. It is a member of the small signal transistor family that is designed for use in both linear and switching circuits. It has a wide range of operating temperature from -55°C to 125°C and features a relatively low collector-emitter saturation voltage of 0.3-0.4 V for a collector current of 1 A.

The main application field of the KSC5020O is in amplifier design. This includes amplification of low-level signals, push-pull, complementary, differential and differential-to-single ended amplifiers. Additionally, it is also suitable for power switching applications such as relay and contactor coil drives, high-speed switching and source switching.

The KSC5020O is a NPN transistor with a three-terminal configuration, consisting of a base, emitter and collector. The emitter and collector are the output terminals, and the base terminal is the input terminal. The operation of the transistor is based around the movement of electrons, and can be divided into two parts: the forward active mode, and the reverse active mode.

In the forward active mode, current flows from the emitter to the collector, and is controlled by a small base current. The base-emitter voltage should be forward biased, which ensures a large number of electrons from the emitter moving towards the collector. As the base-collector voltage is usually much larger than the base-emitter voltage, the electrons are accelerated towards the collector and can pass through the base region of the device.

In the reverse active mode, current flows in the opposite direction, from the collector to the emitter. This is mainly used to turn the transistor off, and is achieved by increasing the base-emitter voltage, making it too large for the electrons in the emitter to overcome. The resistance across the collector and emitter is then changed by decreasing the base current.

The KSC5020O is suitable for use in many different types of applications, and is widely used due to its relatively low cost, excellent performance and wide temperature range. It is an ideal choice for general purpose applications such as amplifiers, power switching and relay/contactor coil drives.

The specific data is subject to PDF, and the above content is for reference

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