Allicdata Part #: | KSC5402DTFTR-ND |
Manufacturer Part#: |
KSC5402DTF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 525V 2A DPAK |
More Detail: | Bipolar (BJT) Transistor NPN 525V 2A 11MHz 30W Sur... |
DataSheet: | KSC5402DTF Datasheet/PDF |
Quantity: | 2000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 525V |
Vce Saturation (Max) @ Ib, Ic: | 750mV @ 200mA, 1A |
Current - Collector Cutoff (Max): | 250µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 6 @ 1A, 1V |
Power - Max: | 30W |
Frequency - Transition: | 11MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252AA |
Base Part Number: | KSC5402 |
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The KSC5402DTF is a well-known type of Bipolar Junction Transistor (BJT). As a single type of transistor, it is most commonly used to amplify weak electronic signals. The category of BJT is generally used where higher power requirement and high-frequency response is needed.
Application Field
The KSC5402DTF can be widely used in fields requiring amplification and switching, such as adjustable current sources, power amplifiers, and load switches. It particularly excels in square wave and low frequency signal applications. Moreover, its good thermal conductivity makes it well-suited for use in high-temperature environments.
Working Principle
At its core, the KSC5402DTF uses two PN junctions. A P-type and an N-type layer of semiconductor material are first connected in the form of a sandwich. In the ON state, the base-emitter junction of the BJT is forward-biased; it conducts electrons from its emitter to its collector, and thus allows a higher current to flow from the emitter to the collector. Meanwhile, the collector-base junction is reverse-biased with a negative voltage, which helps to prevent electrons from entering the base and thus stops further current from flowing from the collector.
In the OFF state, the base-emitter junction is reverse-biased, and thus prevents current from flowing from the emitter to the collector. The collector-base junction is then forward-biased, and thus allows electrons to flow from the collector to the base, forming an "OFF" current.
In both cases, the KSC5402DTF is equipped with internal biasing resistors, which help to ensure steady current and voltage levels. These resistors also reduce the possibility of transients, which can significantly reduce the lifetime of the BJT.
Advantages
The KSC5402DTF is a highly reliable and efficient BJT owing to several key advantages. First, it features excellent high-frequency performance and features a low noise level. As such, it is well-suited for sensitive electronic applications. Second, its low voltage and high speed also allow it to operate on a wide range of power rails. Finally, its metal base ensures superior thermal stability, making it suitable for high-temperature operation.
Conclusion
The KSC5402DTF is an ideal choice for a wide range of applications requiring reliable amplification and switching. As a single type of transistor, it is known for its excellent high-frequency performance, low noise level, low voltage requirements, and high speed. Moreover, its metal base ensures superior thermal stability, making it suitable for use in high-temperature environments. All of these factors combined make the KSC5402DTF an ideal choice for several electrical applications.
The specific data is subject to PDF, and the above content is for reference
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