KSC5047TU

The KSC5047TU is a high voltage, low power, NPN silicon transistor that is classified as a single bipolar junction transistor (BJT). It is a so-called shallow-trench insulated-gate bipolar transistor (STIGBT) due to its advanced trench isolation technology. This type of transistor is a popular choice for applications that require high-voltage handling and low power consumption. In this article, we will discuss the application field and working principle of the KSC5047TU.

The KSC5047TU is mainly used in high-frequency switching applications, such as motor controls, power conversion, and telecom equipment. It is also suitable for audio amplifiers and low-noise, low-power amplifiers. Due to its high current gain, low noise level, and low power consumption, the KSC5047TU is also often used in low-voltage logic circuits. Additionally, it is optimized for low-power operations, with the capability to switch low currents at sub-nanosecond speeds.

The operating junction temperature range of the KSC5047TU is between -55°C and 150°C. It can handle 100V collector-to-emitter voltage and can withstand up to 10V base-emitter voltage. It has a typical value of 2mA base current and can support 400mA collector current. The AC current gain of the KSC5047TU is typically in the range of 100 to 300.

The KSC5047TU working principle is quite straightforward. When the base current is applied, electrons from the base fill the depleted junction between the P-type and N-type silicon. This process causes the current flow from the collector to the emitter. The amount of this current flow is then regulated by the base current. If the base current is increased, the flow of current from the collector to the emitter is also increased and vice-versa. This principle is known as BJT transistor action.

The KSC5047TU is available in a plastic TO-92 and an hermetic TO-95 package. The TO-95 package is ideal for high-temperature applications because it can normally handle temperatures up to 230°C. On the other hand, the TO-92 package is a more cost-effective solution and is suitable for applications that do not require high operating temperatures.

To conclude, the KSC5047TU is a high-voltage, low power NPN silicon transistor that is widely used for applications that require high-frequency switching and low power consumption. Its high current gain and low noise level makes it an ideal choice for low-voltage circuits. Its operating temperature range is between -55°C and 150°C, with the capability to handle 100V collector-to-emitter voltage and up to 10V base-emitter voltage. Furthermore, its working principle is based on BJT transistor action, where the current flow from the collector to the emitter is regulated by the base current.